Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rate

Naoe, M.; Yamanaka, S.; Hoshi, Yoichi

doi:10.1109/tmag.1980.1060683

Cited by 186 publications

(21 citation statements)

References 4 publications

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“…Thin films were prepared by a facing target sputtering system [8]. C was introduced into the films by co-sputtering and reactive gas sputtering, respectively.…”

Section: Methodsmentioning

confidence: 99%

Magnetic Properties of FeCo Films Prepared by Co-Sputtering and Hydrogenous Gas Reactive Sputtering

Liu

Morisako

2008

IEEE Trans. Magn.

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In this experiment, we have added C into FeCo films by two kind of sputtering process, the first is the conventional process of cosputtering, the second is the introducing hydrogenous gas, (acetylene gas in this experiment). The crystallographic, microstructure , and magnetic properties of the films have been compared. Although nano-crystalline films, which have much lower coercivity according to the random anisotropy theory proposed by Herzer [7], can be prepared by both processes, magnetic properties of the films prepared by the two processes are different. Magnetic soft films are successfully prepared with coercivity about 1 Oe, saturation magnetization about 23.5 KG, and real part permeability as large as 1200-1500 in the frequency range up to 2.6 GHz. X-ray photoelectron spectroscopy results show films deposited without hydrogenous gas have oxygen contamination as high as 3 at%. Oxygen free films are found to be prepared with the introducing of acetylene gas during the sputtering process.Index Terms-high magnetic induction films, soft magnetic properties, FeCo, magnetic write head.

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“…Thin films were prepared by a facing target sputtering system [8]. C was introduced into the films by co-sputtering and reactive gas sputtering, respectively.…”

Section: Methodsmentioning

confidence: 99%

Magnetic Properties of FeCo Films Prepared by Co-Sputtering and Hydrogenous Gas Reactive Sputtering

Liu

Morisako

2008

IEEE Trans. Magn.

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“…Facing target sputtering (FTS) process was first introduced by M. Naoe et al [7,8] in 1978, where they reported the deposition of magnetic metal films using two facing targets and a perpendicular magnetic field (to the target surface). A patent on a FTS device was filed in 1991 by Pioneer Electronic Corporation, Japan [9].…”

Section: Introductionmentioning

confidence: 99%

Study of facing target sputtered diamond-like carbon overcoats for hard disk drive media

Seet

Chen

et al. 2015

Thin Solid Films

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“…The target-facing-type sputtering (TFT) described in this paper is known to be able to generate high-density plasma in a high vacuum between two facing targets [9]. Because the TFTS method has the same features as ECR sputtering, it may be able to grow high-quality thin films.…”

Section: Introductionmentioning

confidence: 99%

Preparation of piezoelectric ZnO thin films by target-facing-type sputtering method

Hashimoto

Ogawa

Nonoguchi

et al. 2000

Electron. Comm. Jpn. Pt. II

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Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rate

Cited by 186 publications

References 4 publications

Magnetic Properties of FeCo Films Prepared by Co-Sputtering and Hydrogenous Gas Reactive Sputtering

Magnetic Properties of FeCo Films Prepared by Co-Sputtering and Hydrogenous Gas Reactive Sputtering

Study of facing target sputtered diamond-like carbon overcoats for hard disk drive media

Preparation of piezoelectric ZnO thin films by target-facing-type sputtering method

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