Factors Controlling Pattern Formation in Chemically Amplified Resists at Sub-100 nm Dimensions.

Abstract

At minimum , feature dimensions below 100 nm, the required dimensional tolerances for pattern formation in integrated circuit fabrication approach the length scales of the molecular components and processes typically found in a resist film. This paper summarizes recent experimental work aimed at an improved understanding of photoacid diffusion and line-edge roughness, two key factors that influence dimensional control in chemically amplified resists.

Photoinduced Disorder in Strongly Segregated Block Copolymer Composite Films for Hierarchical Pattern Formation

“…Chemically amplified deprotection of resists using photoacid generators for photolithography has been well investigated by many research groups. − Here we use catalytic deprotection of PtBA induced by the UV exposure of a photoacid generator (PAG) followed by a quick postexposure bake (PEB) to alter the interaction among the resist components and induce disorder. Figure shows the scheme for the photoacid catalyzed, chemically amplified deprotection of the PtBA block to generate PAA at elevated temperatures.…”

Evaluation of aperture mask degradation in electron-beam lithography using line edge roughness of resist patterns

“…LER which is typically on the order of 5 nm depends on molecular structure of resist polymers 1 , process condition 2 , and aerial image quality 3,4 . It is generally agreed that mask quality affects the aerial image, so that LER evaluation will reveal the degradation of mask quality that comprises pattern edge roughness, transmittance, and contamination.…”