Factors to control uniformity of single crystal diamond growth by using microwave plasma CVD

Synthesis of multiple single crystal diamonds by DC-GD-CVD

“…As reported in the literatures [3,6,15], the epitaxial step-flow growth is usually associated with the growth direction against the HPHT diamond substrate, low deposition pressure and the presence of nitrogen impurities in the gas mixture. In present work, owing to the growth misorientation (<3 degrees) direction against the substrate, the low deposition pressure (compared with MPCVD) and the existence of approximately 10 ppm of nitrogen in the gas mixture, the hydrocarbon adsorbents perform a longer diffusion length than the terrace width and then the growth steps are consequently formed during deposition.…”

“…Recently, microwave plasma CVD (MPCVD) [3], hot filament CVD [4] and direct current arc plasma jet CVD (DC arc plasma jet CVD) [5] have been gradually developed for SCD fabrication, and the SCD products with large size and high quality had been successfully synthesised [6]. Many researches on the SCD synthesised by above methods have been carried out, such as the optimisation of deposition parameters [3], the growth mechanism [6] and rate [7], and the quality [8], mechanical [9] and optical performance of as-synthesised SCD [10]. However, to date, it is still a challenge to fabricate CVD SCD with high growth rate, good growth uniformity, high quality and large size [11,12].…”

“…Over the past decade, due to the outstanding physical and chemical characteristics such as high hardness, good optical transparency, excellent thermal conductivity and carrier mobility and very long free-carrier recombination lifetimes [1], single crystal diamond (SCD) prepared by chemical vapour deposition (CVD) has been widely applied as the precision cutting tools, the fabrication of gem stones and the transparent of optical window [2]. Recently, microwave plasma CVD (MPCVD) [3], hot filament CVD [4] and direct current arc plasma jet CVD (DC arc plasma jet CVD) [5] have been gradually developed for SCD fabrication, and the SCD products with large size and high quality had been successfully synthesised [6]. Many researches on the SCD synthesised by above methods have been carried out, such as the optimisation of deposition parameters [3], the growth mechanism [6] and rate [7], and the quality [8], mechanical [9] and optical performance of as-synthesised SCD [10].…”

Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

“…According to plasma sources, PECVDs can be classified as microwave-, direct current (DC)-, and radio frequency (RF) plasma CVD. Among all these methods, microwave plasma CVD is the most widely used method, the reported largest area reached 2 inches in diameter, and the fastest growth rate reached 105 µm/h [14][15][16][17].…”