Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Abbate, Carmine; Busatto, G.; Sanseverino, Annunziata; Tedesco, D.; Velardi, Francesco

doi:10.1016/j.microrel.2018.07.071

Cited by 17 publications

(10 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Short-circuit failure mechanisms are studied in [46][47][48][49]. The drain-to-source voltage distinguishes two failure modes of GaN devices.…”

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

“…The short-circuit withstand time is in the range of few µs or more when the testing voltage is below 350 V. This reduces to a few hundreds of ns when the voltage is above 350 V. The first failure mode is due to the temperature increase of the entire device (i.e. more than 1,000 K), causing damage to the surface metal [48,49]. The second failure mode is related to local thermal destruction in a relatively small region of the device [46], [48,49].…”

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

“…more than 1,000 K), causing damage to the surface metal [48,49]. The second failure mode is related to local thermal destruction in a relatively small region of the device [46], [48,49]. Specifically, it is observed that the righthand side of the gate field plate is the most sensitive part of the testing samples [49].…”

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

See 2 more Smart Citations

Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

“…Short-circuit failure mechanisms are studied in [46][47][48][49]. The drain-to-source voltage distinguishes two failure modes of GaN devices.…”

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

Section: B Selected Failure Mechanismsmentioning

confidence: 99%

See 1 more Smart Citation

Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

“…Moreover, many different studies on the short circuit characterization of GaN HEMTs have been performed in [153][154][155][156], showing the results of finite element simulations and experimental tests in different conditions. In [153], short circuit test on 650 V GaN HEMTs is conducted when the drain voltage is greater than 350 V. Simulation results showed that in these test conditions, a very high-power density was dissipated in a critical region of the device and it was intensified by significant current focalization, as proved by experimental observations.…”

Section: Reliability Of Gan-based Devicesmentioning

confidence: 99%

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

et al. 2021

View full text Add to dashboard Cite

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.

show abstract

“…It can be operated over a wide bandwidth and allows the measurement of both DC and AC components [7]. For this reason, it is widely used in applications such as the characterisation of the behaviour of GaN devices during the short circuit where it is necessary to monitor the current during the entire transient [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

An Accurate Switching Current Measurement Based on Resistive Shunt Applied to Short Circuit GaN HEMT Characterization

et al. 2021

View full text Add to dashboard Cite

The use of a resistive shunt is one of the simplest and most used methods for measuring current in an electronic device. Many researchers use this method to measure drain current during short-circuiting of fast devices such as GaN HEMTs. However, the high switching speed of these devices together with the non-ideality of the shunt resistors produces an overestimation of the current in the initial phases of the transient. In this paper, a passive compensation network is proposed, which is formed by adding an inductor to the voltage measurement circuit and allows an accurate measurement of the current using the resistive shunt even in the presence of very fast devices. The proposed method is validated by simulations and experimental measurements.

show abstract

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Cited by 17 publications

References 10 publications

Power Electronics Reliability: State of the Art and Outlook

Power Electronics Reliability: State of the Art and Outlook

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

An Accurate Switching Current Measurement Based on Resistive Shunt Applied to Short Circuit GaN HEMT Characterization

Contact Info

Product

Resources

About

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Cited by 17 publications

References 10 publications

Power Electronics Reliability: State of the Art and Outlook

Power Electronics Reliability: State of the Art and Outlook

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

An Accurate Switching Current Measurement Based on Resistive Shunt Applied to Short Circuit GaN HEMT Characterization

Contact Info

Product

Resources

About

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests