High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

Mortazavizadeh, Seyed Abolfazl; Palazzo, Simone; Amendola, Arturo; Santis, Enzo De; Ruzza, Dario Di; Panariello, Giuseppe; Sanseverino, Annunziata; Velardi, Francesco; Busatto, G.

doi:10.3390/app112311350

Cited by 17 publications

(7 citation statements)

References 132 publications

(176 reference statements)

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“…Since the design of the broadband rf amplifier with an output of 600 V p‑p over a frequency range of 1 MHz to 200 kHz, remarkable developments have occurred in semiconductor technology. One such advancement is the commercialization of Gallium Nitride (GaN) devices, which has enabled the design and development of circuits with enhanced voltage, power, and speed performance characteristics. , In this work, a high-field rf amplifier incorporated these state-of-the-art technologies, which could amplify signals from 130 to 700 kHz with a maximum output voltage of 900 V p‑p was upgraded. Although the bandwidth is greater than 1 MHz for higher frequencies, the slew rate reaches its limit (4000 V/μs), necessitating voltage reduction to prevent distortion caused by insufficient slew rate.…”

Section: Methodsmentioning

confidence: 99%

Development of a High-Field “Brick” Mass Spectrometer with Extended Mass Range and Capable of Characterizing Native Proteins

Zhang,

Jia,

Hong

et al. 2023

Anal. Chem.

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One of the main challenges of analyzing intact proteins on an ion trap mass spectrometer is the mass range limitation, especially for miniature mass spectrometers. In this study, a high-field frequency scanning ion trap miniature mass spectrometer, namely the high-field "Brick" mass spectrometer, was developed to analyze intact proteins. A high-voltage broadband radio frequency (rf) amplifier was designed with a maximum output of 900 V p-p over a frequency range of 130−700 kHz. Compared to the 600 V p-p rf amplifier equipped in the conventional "Brick" mass spectrometer, the mass range of the instrument could be extended from 2000 to over 8000 Th. Sensitivity and mass resolution for native protein analyses were also evaluated and compared. Various proteins as well as their mixtures were analyzed on the high-field "Brick" mass spectrometer. The noncovalent interaction between protein−ligand complexes, lysozyme with triN-acetylchitotriose, was also analyzed. In addition, a hybrid ion scan mode was explored to further expand the mass range of the instrument at both low-and high-mass ends. In the hybrid ion scan mode, both rf frequency and amplitude were tuned, and a mass range from 100 to 12,000 Th was realized. As a result, both small drugs and proteins could be analyzed in a single mass scan. As proof-of-concept demonstrations, a mixture of atenolol and bovine serum albuminand oligomers of transferrin were analyzed.

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Section: Methodsmentioning

confidence: 99%

Development of a High-Field “Brick” Mass Spectrometer with Extended Mass Range and Capable of Characterizing Native Proteins

Zhang,

Jia,

Hong

et al. 2023

Anal. Chem.

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“…The ZVS function can be compromised if the switching frequency, denoted as f s , is too low. Consequently, designers must take this into account when dealing with applications that require a wide voltage gain [16,17]. Furthermore, the use of the L 2 C converter as an EV charger is subject to many limitations.…”

Section: Modeling and Operation Of Il 2 C Converter Topologymentioning

confidence: 99%

Analysis of Scalable Resonant DC–DC Converter Using GaN Switches for xEV Charging Stations

Narasipuram,

Mopidevi,

Dianov

et al. 2024

WEVJ

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In this research, an innovative electric vehicle (EV) charger is designed and presented for xEV charging stations. The key feature of our system is a scalable, interleaved inductor–inductor–capacitor (iL2C) DC-DC converter operation. The proposed system employs two parallel L2C converters with 8-GaN switches on the primary side and a shared rectifier circuit on the secondary side. This configuration not only amplifies the resonant tank internal currents and losses generated by the switches but also improves current sharing. A novel closed-loop technique is proposed with a constant-voltage method of operation, along with a hybrid control scheme of variable frequency + phase shift modulation (VFPSM). To examine the controller and converter’s performance, an experimental demonstration is conducted under varying load conditions, including full load, half load, and light load, where the source voltage and load voltage are maintained at constant levels of 400 Vin and 48 V0, respectively. Furthermore, line regulation is conducted and verified to accommodate a broad input voltage range of 300 Vin–500 Vin and 500 Vin–300 Vin while maintaining an output voltage of 48 V0 at 3.3 kW, 1.65 kW, and 0.33 kW with a peak efficiency of 98.2%.

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“…Recently, developers of HEMT devices have also been experimenting with multilevel converters, such as flying capacitor inverter topology, to exploit the compactness of GaN transistors and the high switching frequencies in these power circuits [51]. The investiga- The LLC resonant converter is one of the topologies in which the use of e-mode GaN FETs allows for the achievement of the best power density [42]. The zero voltage switching achieved in an LLC converter permits an increase in efficiency, and the high switching frequency reachable (from 1 to tens of MHz) dramatically reduces the resonant tank's size.…”

Section: Gan For Dc-dc Power Convertersmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

Cited by 17 publications

References 132 publications

Development of a High-Field “Brick” Mass Spectrometer with Extended Mass Range and Capable of Characterizing Native Proteins

Development of a High-Field “Brick” Mass Spectrometer with Extended Mass Range and Capable of Characterizing Native Proteins

Analysis of Scalable Resonant DC–DC Converter Using GaN Switches for xEV Charging Stations

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

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