Far-Infrared Cyclotron Resonance in the Inversion Layer of Silicon

Allen, S. J.; Tsui, D. C.; Dalton, J. V.

doi:10.1103/physrevlett.32.107

Cited by 89 publications

(8 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our work, charge carriers are injected by biasing a metal-insulator-semiconductor device. [16][17][18][19] Differential transmission measurements provide transport properties, such as the Drude scattering time, the mobility, and the conductivity effective mass of the injected carriers. 20 In our experiments on pentacene thin films, we deduce for holes a high-frequency mobility ðl AC % 21 cm 2 =VsÞ that exceeds the DC mobility ðl DC % 7 Â 10 À3 cm 2 =VsÞ by orders of magnitude.…”

mentioning

confidence: 99%

Terahertz spectroscopy on hole transport in pentacene thin films

Engelbrecht

Prinz

Arend

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

Charge transport in pentacene thin films is investigated using terahertz electromodulation spectroscopy. Although the material is highly polycrystalline, a hole mobility of about 20 cm2/Vs is found, which exceeds the mobility obtained in DC measurements by orders of magnitude. The high AC mobility results from a motion of charge carriers, which is not hindered by grain boundaries. An upper limit of mh*≈0.8 me is deduced for the conductivity effective mass of holes in pentacene.

show abstract

mentioning

confidence: 99%

Terahertz spectroscopy on hole transport in pentacene thin films

Engelbrecht

Prinz

Arend

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The magnitude of the first-order terms suggests that second-order terms can be important (Ref. 7). For adsorption in a threefold site on Al(lll), the first-order treatment gives physically reasonable results for Si…”

mentioning

confidence: 98%

“…1 and 5) are 1.3 eV (Li), 3.0 eV (Si), and 3.6 eV (CI).] 7 K. Y. Yu, J. N. Miller, P. Chye, W. E. Spicer, N. D. Lang, and A. R. Williams, Phys. Rev.…”

mentioning

confidence: 99%

Infrared Cyclotron Resonance in Semiconducting Surface Inversion Layers

1976

View full text Add to dashboard Cite

The frequency-dependent conductivity o-(to) of a two-dimensional interacting electron gas in the presence of a random array of scattering centers and a dc magnetic field is studied. Electron-electron interaction effects enter v(u) through the holomorphic memory function M(oo) whose imaginary part is the inverse of the frequency-dependent relaxation time T(W). A qualitative explanation of some of the perplexing results observed in infrared cyclotron resonance, including how electron-electron interactions affect both the fundamental and harmonics, is given 0

show abstract

“…2 Effective masses of the subbands were measured using Shubnikov-de-Haas ͑SdH͒ oscillation 2-6 and cyclotron resonance ͑CR͒. [7][8][9][10][11][12][13] The energylevel separations of the quantum levels were measured by intersubband optical-absorption, [14][15][16][17][18] inelastic-lightscattering, 19,20 and photoconductivity measurements. 21,22 Far-infrared light emission through the intrasubband transition was also investigated.…”

mentioning

confidence: 99%

Effect of surface carrier concentration on valence subbands in Si(111)p-type inversion layers: Angle-resolved photoemission spectroscopy

2010

View full text Add to dashboard Cite

We investigated the effect of surface carrier concentration on the quantum levels and the in-plane effective masses of the subbands in Si͑111͒ p-type inversion layers. Two inversion layers with different surface carrier concentrations were made as a result of metallic surface structures. The subband dispersion was measured by angle-resolved photoelectron spectroscopy. The energy levels of the observed subbands at k = 0.0 Å −1 partially agree with the results of the calculation using the triangular approximation. The effective masses are not significantly affected by the surface carrier concentration. The spatial extension of the subband wave functions is discussed.

show abstract

Far-Infrared Cyclotron Resonance in the Inversion Layer of Silicon

Cited by 89 publications

References 9 publications

Terahertz spectroscopy on hole transport in pentacene thin films

Terahertz spectroscopy on hole transport in pentacene thin films

Infrared Cyclotron Resonance in Semiconducting Surface Inversion Layers

Effect of surface carrier concentration on valence subbands in Si(111)p-type inversion layers: Angle-resolved photoemission spectroscopy

Contact Info

Product

Resources

About