Far-infrared p-Ge laser with variable length cavity

Muravjov, A. V.; Nelson, E. W.; Peale, Robert E.; Shastin, V. N.; Fredricksen, Christopher J.

doi:10.1016/s1350-4495(02)00160-3

Cited by 8 publications

(4 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Piezo-control of the selector has allowed ÿne tuning between nearby longitudinal modes [8]. A variable-length cavity was demonstrated, which in principle allows continuous tuning without mode hops [9].…”

Section: Introductionmentioning

confidence: 99%

Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

Bosq¹,

Peale²,

Nelson³

et al. 2005

Optics & Laser Technology

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

Bosq¹,

Peale²,

Nelson³

et al. 2005

Optics & Laser Technology

View full text Add to dashboard Cite

“…11 Recently, a variable-length cavity was demonstrated, which in principle allows continuous tuning without mode hops. 12 Nevertheless, the dream of a practical p-Ge laser with wavelength selection remains elusive after nearly two decades of research.…”

Section: Introductionmentioning

confidence: 99%

Dielectric selective mirror for intracavity wavelength selection in far-infrared p-Ge lasers

Bosq

Peale

Nelson

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

A robust metal-free intracavity fixed-wavelength selector for the cryogenically cooled far-infrared p-Ge laser is demonstrated. The device is a back mirror consisting of a thin silicon etalon and dielectric SrTiO 3 flat. A laser line width of 0.2 cm Ϫ1 is achieved, which corresponds to an active cavity finesse of ϳ0.15. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. Use of SrTiO 3 lowers the laser resonance line frequencies by ϳ1 cm Ϫ1 compared with expectations for metal mirrors. The effect is due to phase shift, which is determined from far-infrared reflectivity measurements of SrTiO 3. A p-Ge laser with such selector is free from danger of electrical breakdown and mirror oxidation during repeatable thermal cycling, which makes it more reliable than previous selection schemes for practical applications.

show abstract

“…5 Recently, a variable -length cavity was demonstrated, which in principle allows continuous tuning without mode hops. 6 Nevertheless, the dream of a practical tun able p-Ge laser remains elusive after nearly two decades of research.…”

Section: Introductionmentioning

confidence: 99%

Fixed wavelength selection for the far-infrared p-Ge laser using patterned silicon etched mirrors

et al. 2003

View full text Add to dashboard Cite

An etched silicon gold plated lamellar mirror is demonstrated as a fixed-wavelength intracavity selector for the farinfrared p-Ge laser, facilitating spectroscopic applications. The depth of the selective mirror, which defines the laser operation wavelength, can be precisely controlled during the etching process. The third-order Fabry-Perot resonance of this selector yields an active cavity finesse of at least 0.06.

show abstract

Far-infrared p-Ge laser with variable length cavity

Cited by 8 publications

References 11 publications

Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

Dielectric selective mirror for intracavity wavelength selection in far-infrared p-Ge lasers

Fixed wavelength selection for the far-infrared p-Ge laser using patterned silicon etched mirrors

Contact Info

Product

Resources

About