Far-infrared sensor with LPCVD-deposited low-stress Si-rich nitride absorber membrane

Jutzi, F.; Wicaksono, Dedy H. B.; Pandraud, G.; Rooij, N. F. de; French, Pim J.

doi:10.1016/j.sna.2008.12.024

Cited by 19 publications

(5 citation statements)

References 12 publications

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“…The spectrum of the transmittance, T , is measured. The absorption spectrum, A , is then directly extracted from the following expression 50 : A = 1-T-R , assuming the total reflectivity ( R ) from the sample in the LWIR is around 5% 51 .…”

Section: Methodsmentioning

confidence: 99%

Shape memory polymer resonators as highly sensitive uncooled infrared detectors

et al. 2019

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Uncooled infrared detectors have enabled the rapid growth of thermal imaging applications. These detectors are predominantly bolometers, reading out a pixel’s temperature change due to infrared radiation as a resistance change. Another uncooled sensing method is to transduce the infrared radiation into the frequency shift of a mechanical resonator. We present here highly sensitive resonant infrared sensors, based on thermo-responsive shape memory polymers. By exploiting the phase-change polymer as transduction mechanism, our approach provides 2 orders of magnitude improvement of the temperature coefficient of frequency. Noise equivalent temperature difference of 22 mK in vacuum and 112 mK in air are obtained using f/2 optics. The noise equivalent temperature difference is further improved to 6 mK in vacuum by using high-Q silicon nitride membranes as substrates for the shape memory polymers. This high performance in air eliminates the need for vacuum packaging, paving a path towards flexible non-hermetically sealed infrared sensors.

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Section: Methodsmentioning

confidence: 99%

Shape memory polymer resonators as highly sensitive uncooled infrared detectors

et al. 2019

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“…Due to the good thermal conduction and IR absorption of the boron heavily doped silicon slab, the thermopile structure with boron heavily doped silicon slabs as the IR absorber has also been demonstrated [13,14]. Recently, the experimental work of Lenggenhager et al [5] and Jutzi et al [15] showed that CMOS dielectric layers can also provide a sufficient IR absorption coefficient for certain spectral bands. Thus, SiO 2 -Si 3 N 4 -SiO 2 sandwich film stack is adopted as the absorber layer in this experimental work.…”

Section: Absorber Designmentioning

confidence: 99%

Design, fabrication and characterization of a front-etched micromachined thermopile for IR detection

Xiong

Wang

2010

J. Micromech. Microeng.

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This paper presents the design, fabrication and experimental results of a front-etched CMOS compatible micromachined thermopile IR detector. The N-polysilicon/Al thermocouples were embedded in a 2.5 μm thick SiO 2 -Si 3 N 4 -SiO 2 sandwich membrane, and XeF 2 front-side isotropic post-etching was adopted to release and thermally isolate the thermopile structure. Due to the isotropy of XeF 2 etching, a lot of flexibility was allowed in etching window layout and thermopile structure design. Etching windows in the dielectric absorber area were designed to avoid cutting off the heat transfer path from the absorber to hot junctions, and aluminum strips were patterned in the absorber to ensure the temperature was uniform across the absorber area. Two different thermopile structures, circle and rectangle, were designed and fabricated to investigate detector performance with respect to the thermopile structure. The steady-state behavior of fabricated detectors was anticipated by thermal ANSYS simulation. Due to the fact that the circular structure can get a higher temperature difference between hot and cold junctions, the circular thermopile detector has a quicker response, two times higher responsivity and detectivity than the rectangular thermopile detector. The circular thermopile detector exhibits a responsivity of 102.0 V W −1 , a detectivity of 9.2 × 10 7 cm Hz 1/2 W −1 and a time constant of 16.8 ms, in air at room temperature.

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“…Furthermore, their preparation process is much more complicated and cost is relatively high. A silicon nitride (Si3N4) or silica (SiO2) layer or SiO2/Si3N4/SiO2 sandwich film structure is also often used as the IR absorber of thermopile chip (termed a "membrane" layer), however provides low IR absorption and narrow absorption range [6][7][8].…”

Section: Introductionmentioning

confidence: 99%