Fast and Accurate Frequency-Dependent Behavioral Model of Bonding Wires

Wang, To-Po; Lu, You-Fu

doi:10.1109/tii.2017.2737525

Cited by 16 publications

(6 citation statements)

References 37 publications

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“…The geometric representation of a BW is depicted in Figure 2A, which corresponds to the standardized Joint Electron Device Engineering Council model. For applications within the Sub‐6G, the

\pi

‐type model is adopted as an applicable equivalent representation for BWs, 8 as shown in Figure 2B. The foremost factors influencing the values of the equivalent inductor and resistor encompass the overall length (

l

) and wire diameter (

{d}_{i}

) of the BW 4 .…”

Section: Parasitic Effects Analysis and Dpa Designmentioning

confidence: 99%

High‐efficiency Doherty power amplifier based on codesign with bonding wires

Zhong,

He,

Song

et al. 2024

Micro & Optical Tech Letters

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In this letter, a method for designing a Doherty power amplifier (DPA) using bare die and bonding wires (BWs) is proposed. This method adjusts the geometric parameters of BWs to achieve the desired transmission characteristics, allowing BWs to actively participate in the formation of the matching network, thus realizing the codesigning of the DPA and BWs. By designing appropriate BWs compensation to mitigate the intrinsic parasitics of bare die, the inherent obstacles caused by transistor parasitic effects are mitigated. This strategy offers a distinct advantage in terms of concurrently adjusting the target load impedance and phase, leading to a streamlined DPA design process. At the same time, the nonclipping impedance region is expanded, which attenuates the nonlinear effects of parasitic effects. On the basis of the proposed methodology, a DPA operating at 3–4 GHz is designed. Measured results show that the DPA achieves a saturation output power of 42.4–43.6 dBm in the operating band, accompanied by a drain efficiency of 55%–66%, while achieving 42%–54% at 6 dB output back‐off level.

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“…The geometric representation of a BW is depicted in Figure 2A, which corresponds to the standardized Joint Electron Device Engineering Council model. For applications within the Sub‐6G, the

\pi

l

) and wire diameter (

{d}_{i}

) of the BW 4 .…”

Section: Parasitic Effects Analysis and Dpa Designmentioning

confidence: 99%

High‐efficiency Doherty power amplifier based on codesign with bonding wires

Zhong,

He,

Song

et al. 2024

Micro & Optical Tech Letters

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show abstract

“…R s can be affected by the skin effect, dependent on frequency [25][26][27]. Thus, Re(Z) and the inductive reactance (X L ) are increased by the increased frequency.…”

Section: Charactristics Of Venting Clipmentioning

confidence: 99%

Theoretical and experimental analysis of a venting clip to reduce stray inductance in high‐power conversion applications

et al. 2021

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“…Many researches have been conducted on the transmission characteristics of bondwires. [1][2][3][4][5][6][7][8] In Reference 1, a finite-difference time-domain (FDTD) method is proposed for the rigorous analysis of bondwire's modeling and electrical characterization. In addition, a quasistatic model was proposed and proved its practicality.…”

Section: Introductionmentioning

confidence: 99%

“…studied the equivalent circuit model of bondwire, including lumped element model and distributed model, both of which became the basic model of bondwire research. Based on which, 3 proposed an improved model of bondwires, taking into account the skin effect 4,5 . extend the equivalent model research to the double‐bondwire in Reference 6, the relationship between materials with different dielectric constant and return loss were investigated.…”

Section: Introductionmentioning

confidence: 99%

Study of harmonic control power amplifier technology based on improved modeling of bondwire

Zhong

Song

et al. 2022

Int J RF Mic Comp-Aid Eng

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Wire bonding is widely used in various radio frequency (RF) devices and is one of the common forms of signal interconnection. In this article, a new geometric model with related physical parameters is used to describe various actual types of the bondwire, and the corresponding calculation method for the total length of the bondwire is obtained. Consequently, a new equivalent circuit modeling method of the single‐bondwire can be developed and the accuracy of model has been improved. On this basis, using the concept of partial inductance, the modeling method of double‐bondwire is proposed, which can be applied to asymmetric double‐bondwire modeling. The model of bondwire obtained by this modeling method is applied to the design of PA, and the special electrical properties of the bondwire are used to verify a novel harmonic control method, which second and third harmonics could be controlled. The results show that in the Sub‐6G, the proposed bondwire model has good accuracy, and its performance is close to the measured results. The designed PA combined with harmonic control network has good performance, achieving drain efficiency of 62.6%–70% and output power of 40–41.5 dBm at 3.2–3.8 GHz. It is proved that the proposed bonding line modeling method can be applied to the design of high‐efficient PA.

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Fast and Accurate Frequency-Dependent Behavioral Model of Bonding Wires

Cited by 16 publications

References 37 publications

High‐efficiency Doherty power amplifier based on codesign with bonding wires

High‐efficiency Doherty power amplifier based on codesign with bonding wires

Theoretical and experimental analysis of a venting clip to reduce stray inductance in high‐power conversion applications

Study of harmonic control power amplifier technology based on improved modeling of bondwire

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