We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature cofired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At 175°C, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current (I RM ), reverse recovery time (T rr ), and reverse recovery charge (Q rr ) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to 300 A/ls.

In this paper, we present the design and characterization analysis of a cascode GaN field‐effect transistor (FET) for switching power conversion systems. To enable normally‐off operation, a cascode GaN FET employs a low breakdown voltage (BV) enhancement‐mode Si metal‐oxide‐semiconductor FET and a high‐BV depletion‐mode (D‐mode) GaN FET. This paper demonstrates a normally‐on D‐mode GaN FET with high power density and high switching frequency, and presents a theoretical analysis of a hybrid cascode GaN FET design. A TO‐254 packaged FET provides a drain current of 6.04 A at a drain voltage of 2 V, a BV of 520 V at a drain leakage current of 250 μA, and an on‐resistance of 331 mΩ. Finally, a boost converter is used to evaluate the performance of the cascode GaN FET in power conversion applications.

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We propose a substrate with high thermal conductivity, manufactured by the lowtemperature co-fired ceramic (LTCC) multilayer circuit process technology, as a

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