Fast and Low Loss Gate Driver for SiC‐MOSFET

Abstract

SUMMARY This paper presents a gate driver with fast switching and low switching loss for silicon carbide‐metal oxide semiconductor field effect transistors. The proposed driver consists of a very simple gate boost circuit and a speed up circuit, and so is cost‐effective. Normally, conventional gate drive methods include a trade‐off between switching losses and noise. The proposed gate driver can reduce switching losses without increasing surge voltage as well as voltage and current fluctuations. The proposed gate driver is able to eliminate the trade‐offs in the switching characteristics.

A gate driver for parallel connected MOSFETs with crosstalk suppression

“…V ds V ds Although negative gate voltage helps in most applications, there are still special cases (i.e., unusually high rates of drain-source voltage ( ), high ambient temperature), where the safe margin is not large enough and additional measures are required to prevent spurious turn-on. Several researchers have studied this phenomenon focusing on methods to evaluate or predict the generated voltage level [8,9] and methods to reduce its amplitude. Some methods exploit separated turn-on and turn-off resistances (or modify them) to clamp gate voltage tightly to gate driver output [10][11][12] .…”