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SUMMARY This paper presents a gate driver with fast switching and low switching loss for silicon carbide‐metal oxide semiconductor field effect transistors. The proposed driver consists of a very simple gate boost circuit and a speed up circuit, and so is cost‐effective. Normally, conventional gate drive methods include a trade‐off between switching losses and noise. The proposed gate driver can reduce switching losses without increasing surge voltage as well as voltage and current fluctuations. The proposed gate driver is able to eliminate the trade‐offs in the switching characteristics.