Fast and wide-band response infrared detector using porous PZT pyroelectric thick film

Wu, Ch. G.; Sun, Xiangyu; Meng, Jin; Luo, Wenbo; Li, P.; Peng, Qiangxiang; Luo, Yong; Shuai, Yao

doi:10.1016/j.infrared.2013.11.013

Cited by 14 publications

(12 citation statements)

References 21 publications

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“…Figure a illustrates the dielectric properties of PZT/LNO multilayer thick film as a function of frequency in the range of 1 kHz–1 MHz at different electric fields. The multilayer thick film exhibited remarkably enhanced dielectric properties among other reported values of PZT thick films (∼600 to 1600) , reaching to ϵ r ∼2450, tan δ ∼0.02 at 10 kHz. As presented in the inset of Fig.…”

Section: Resultsmentioning

confidence: 58%

“…a, the dielectric properties of the PZT thick film are ϵ r ∼770, tan δ ∼0.05 (at 10 kHz), which is similar with the result of Refs. . It could be agreed that the LNO interlayer affected the induced polarization of PZT film effectively and improved the permittivity of multilayer thick film significantly.…”

Section: Resultsmentioning

confidence: 74%

“…In addition, sensors and detectors based on PZT thick film can work in a broader working frequency range compared to those based on PZT thin films since they have higher dielectric constant, piezoelectric coefficient, and pyroelectric coefficient . There are a variety of methods to prepare PZT thick films on silicon substrates, such as screen printing , sol‐gel techniques , aerosol deposition , and magnetron sputtering . Among them, the PZT thick films prepared by the first three processes need to be heat treated at high temperature (≥850 °C), which may cause some issues such as cracks and voids.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Fan¹,

Chen²,

Habibul³

et al. 2016

Physica Status Solidi (a)

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Multilayer thick films ($4 mm) with compositional PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 layers and one-layer PZT thick films were prepared on the silicon substrate by radio-frequency magnetron sputtering. PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film are characterized by highly preferential (100)-oriented growth and columnar microstructure due to alternately introducing LaNiO 3 seeding layers. The effects of LaNiO 3 layers on microstructure and electrical properties of PbZr 0.3 Ti 0.7 O 3 thick films were investigated in detail. The results show that both PZT and PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film were pure perovskite crystalline phase.The PbZr 0.3 Ti 0.7 O 3 film texture was dense and well adhered on the LaNiO 3 layer. PbZr 0.3 Ti 0.7 O 3 /LaNiO 3 multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: e r $2450 (10 kHz) and tand $0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched-shaped polarization-electric field hysteresis loops. The larger Rayleigh parameter, a $51.1408 cm kV À1 (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domainwall-defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail.ß 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1 Introduction With the development of siliconbased microelectromechanical systems (MEMS) technology, ferroelectric/piezoelectric thick films (1-100 mm) are a research hotspot from the viewpoint of their combining the advantages of bulk materials and thin films with high sensitivity, wide frequency range, good mechanical properties, and good compatibility with CMOS devices. PbZr x Ti 1Àx O 3 (PZT)-based thick films possess high reliabilities in applications of high-sensitivity sensors and pyroelectric infrared detectors. In addition, sensors and detectors based on PZT thick film can work in a broader working frequency range compared to those based on PZT thin films since they have higher dielectric constant, piezoelectric coefficient, and pyroelectric coefficient [1][2][3][4]. There are a variety of methods to prepare PZT thick films on silicon substrates, such as screen printing [5,6], sol-gel techniques [7], aerosol deposition [8], and magnetron sputtering [9]. Among them, the PZT thick films prepared by the first three processes need to be heat treated at high temperature (!850 8C), which may cause some issues such as cracks and voids. In contrast, the PZT thick films

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Section: Resultsmentioning

confidence: 58%

Section: Resultsmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

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Dielectric enhancement of PbZr_0.3Ti_0.7O₃/LaNiO₃ multilayer thick film

Fan¹,

Chen²,

Habibul³

et al. 2016

Physica Status Solidi (a)

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show abstract

“…The effect of low permittivity layers, which are formed at the interface of PZT film and electrode, is reduced by increasing the thickness. Besides, the reduction of stress in the thicker layers is another reason for increasing the dielectric constant [3]. Furthermore, FESEM results show the formation of pyrochlore phase on the film by adding 0.25 molar ratio of DEA.…”

Section: Effect Of Deamentioning

confidence: 95%

“…Crack-free piezoelectric thick films (>10 m) have been investigated for a variety of device applications including micro electromechanical systems (MEMS), microactuators with relatively large generative force, ultrasonic transducers at frequency larger than 50 MHz, micropumps, pyroelectric infrared detectors, and bulk acoustic wave bandpass filters [1][2][3]. Morphotropic composition of lead zirconate titanate solid solution Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) has been subject of interest in the area of MEMS because of its remarkable dielectric, piezoelectric, and ferroelectric properties [4].…”

Section: Introductionmentioning

confidence: 99%