Fast characterization of line-end shortening and application of novel correction algorithms in e-beam direct write

Freitag, Martin; Choi, Kang‐Hoon; Gutsch, Manuela; Hohle, Christoph; Galler, R.; Krüger, Michael; Weidenmueller, Ulf

doi:10.1117/12.879582

Cited by 2 publications

(1 citation statement)

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“…In the direct writing of wafers using 50 keV variable shaped beam (VSB) e-beams, there has been studies [7,8,9] for enhancing the accuracy of the images shot, especially with respect to edge slope, or dose margin, which directly relates to CDU and line edge roughness (LER) on the wafer. Since wafer dimensions are roughly a quarter of the mask dimensions, the direct write community faces accuracy issues earlier than the mask making community.…”

Section: Introductionmentioning

confidence: 99%

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction

Hagiwara

Bork²,

Fujimura³

2011

SPIE Proceedings

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Using Model-Based Mask Data Preparation (MB-MDP) complex masks with complex sub-resolution assist features (SRAFs) can be written in practical write times with today's leading-edge production VSB machines by allowing overlapping VSB shots. This simulation-based approach reduces shot count by taking advantage of the added flexibility in being able to overlap shots. The freedom to overlap shots, it turns out, also increases mask fidelity, CDU on the mask, and CDU on the wafer by writing sub-100nm mask features more accurately, and with better dose margin. This paper describes how overlapping shots enhance mask and wafer quality for various sub-100nm features on ArF masks. In addition, this paper describes how EUV mask accuracy can be enhanced uniquely by allowing overlapping shots.

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Section: Introductionmentioning

confidence: 99%

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction

Hagiwara

Bork²,

Fujimura³

2011

SPIE Proceedings

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Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography

Liu

Shen

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Electron-beam–direct-write lithography at lower accelerating voltages has been considered as a candidate for next-generation lithography. Although long-range proximity effects are substantially reduced with the voltage, proximity effect correction (PEC) is still necessary since short-range proximity effects are relatively prominent. The effectiveness of model-based PEC can be limited severely if an inaccurate point spread function (PSF) characterizing electron scattering within resist is adopted. Recently, a new PSF form using a promising calibration method has been developed to more accurately characterize the electron scattering and thus significantly improve patterning fidelity at 5 keV. However, influences of adopting the conventional and new PSF forms for the usage of patterning practical circuit layouts have not been intensively studied. This work extensively investigates impacts of PSF accuracy on patterning prediction and PEC under different resist thickness conditions suitable for various lithographic half-pitch nodes, where the critical features of practical circuit layouts are used to quantitatively evaluate their performance. In addition, patterning fidelity limitation suffered from proximity effects is examined to determine whether PEC should be applied. Simulation results indicate that the new PSF form can significantly improve the fitting accuracy, patterning prediction, and PEC results over the conventional PSF forms, especially for circuit layouts with smaller feature sizes.

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Fast characterization of line-end shortening and application of novel correction algorithms in e-beam direct write

Cited by 2 publications

References 0 publications

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction

Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography

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