Fast Co‐Diffusion Process for Bifacial n‐Type Solar Cells

Meier, Sebastian; Maier, Stefan A.; Demberger, Carsten; Aßmus, W.; Biro, Daniel; Glunz, Stefan W.

doi:10.1002/solr.201600005

Cited by 11 publications

(4 citation statements)

References 12 publications

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“…A célula PANDA desenvolvida em substrato de silício tipo n obteve eficiências da ordem de 19 % a 20 % (Song et al, 2011). Empresas como a Suniva e diversos centros de pesquisa ao redor do mundo vêm desenvolvendo células solares em substratos de silício tipo n. Recentemente, Meier et al (2017) relataram a obtenção de 20,1 % de eficiência em células solares bifaciais fabricadas em silício tipo n com a aplicação de um processo de co-difusão para a formação do emissor de boro e um campo retrodifusor (BSFback surface field) de fósforo. Dentre os principais aspectos estudados, o maior desafio na fabricação de células solares em substratos dopados com fósforo é a passivação do emissor frontal, formado pela difusão de boro.…”

Section: Introductionunclassified

ANÁLISE DE CÉLULAS SOLARES P+NN+ EM SILÍCIO GRAU SOLAR COM EMISSOR OBTIDO POR BBr

Garcia,

Moehlecke,

Zanesco

2023

RBENS

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A indústria de células solares baseia-se na fabricação de dispositivos com estrutura n+pp+, com emissor de fósforo e campo retrodifusor de alumínio. Entretanto, estudos têm demonstrado que a exposição à radiação solar pode causar a degradação das características elétricas destes dispositivos, o que não foi observado em células solares fabricadas em silício tipo n. Uma das estruturas possíveis em substratos tipo n é a p+nn+, que é geralmente constituída por um emissor frontal formado pela difusão de boro e campo retrodifusor formado pela difusão de fósforo. Com o objetivo de desenvolver células solares de estrutura p+nn+, processos experimentais de fabricação foram realizados para dispositivos com emissor homogêneo obtido por BBr3. Observou-se que as características elétricas das células solares fabricadas em silício grau solar tipo n são altamente afetadas pelo número de passos térmicos de alta temperatura. A eficiência máxima obtida em dispositivos com emissor formado por BBr3 foi de 12,7 %. Em uma comparação entre dispositivos com emissor p+ formado por BBr3 e a partir de PBF20 (solução alcoólica de boro) depositado por spin-on, observou-se que o uso do BBr3 e a sequência de passos térmicos não são adequados para a fabricação de células solares p+nn+ em lâminas de silício grau solar.

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Section: Introductionunclassified

ANÁLISE DE CÉLULAS SOLARES P+NN+ EM SILÍCIO GRAU SOLAR COM EMISSOR OBTIDO POR BBr

Garcia,

Moehlecke,

Zanesco

2023

RBENS

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“…Nowadays n ‐type monocrystalline silicon (mono‐Si) solar cells are becoming more important for photovoltaic (PV) industry due to their high‐efficiency potential and inherently good bifaciality . Typical bifacial n ‐type mono‐Si solar cells, known as front and back contact ( n FAB) cells at SERIS, adapt the passivated emitter and rear totally diffused (PERT) p + – n – n + structure, with the use of a full area phosphorus‐doped back surface field (BSF) . Currently, three types of diffusion techniques/tools are available for BSF formation: tube diffusion using phosphoryl chloride (POCl 3 ), ion implantation, and atmospheric pressure chemical vapor deposition (APCVD).…”

Section: Introductionmentioning

confidence: 99%

Development of High‐Efficiency n‐Type Front and Back Contact Passivated Emitter and Rear Locally Diffused Solar Cells Using Atmospheric Pressure Chemical Vapor Deposition of Phosphosilicate Glass and Laser Processing

Yan

Ning

Suhaimi

et al. 2020

Physica Status Solidi (a)

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Industrial bifacial n‐type front and back contact (nFAB) silicon solar cells, consisting of a boron‐doped p+ emitter and a phosphorus‐doped n+ back surface field (BSF), are known to give good bifaciality, high and stabilized efficiency. One possible approach to further enhance the cell efficiency is to convert conventional passivated emitter and rear totally diffused (PERT) into rear locally diffused (PERL) structure. Herein, bifacial nFAB PERT and PERL cells are fabricated by combining atmospheric pressure chemical vapor deposition (APCVD) of phosphosilicate glass (PSG) as doping source and laser processing. For PERL cells, two approaches are studied to locally form phosphorus‐doped BSF: 1) laser doping, and 2) laser ablation of a diffusion barrier layer. For ablation approach, an alkaline treatment is introduced immediately after laser process, which leads to the formation of locally textured BSF. Due to this locally textured contact, the resultant fill factor (FF) and series resistance (Rs) loss of the PERL cells are even less than that of the reference PERT cells. As a result, the champion cell of PERL shows a good efficiency of 21.3% with open‐circuit voltage (Voc) of 662 mV, short‐circuit current density (Jsc) of 39.6 mA cm−2, and a high FF of 81.1%.

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“…There have been many studies on co-diffusion of boron and phosphorus to resolve the many steps of boron diffusion. Rothhardt et al studied co-diffusion from BSG and phosphorus doped glass, (PSG), deposited by plasma enhanced chemical vapor deposition (PECVD), and Meier et al used BSG deposited by atmospheric pressure chemical vapor deposition (APCVD) and POCl 3 gas ambient as a doping source [12][13][14]. These methods reduced diffusion steps compared with conventional boron diffusion using BBr 3 gas, but they are still complicated methods due to BSG deposition.…”

Section: Introductionmentioning

confidence: 99%

Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells

Choi¹,

Lee²,

Jung³

et al. 2018

J. Phys. D: Appl. Phys.

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This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 µm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm−2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 µm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.

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Fast Co‐Diffusion Process for Bifacial n‐Type Solar Cells

Cited by 11 publications

References 12 publications

ANÁLISE DE CÉLULAS SOLARES P+NN+ EM SILÍCIO GRAU SOLAR COM EMISSOR OBTIDO POR BBr

ANÁLISE DE CÉLULAS SOLARES P+NN+ EM SILÍCIO GRAU SOLAR COM EMISSOR OBTIDO POR BBr

Development of High‐Efficiency n‐Type Front and Back Contact Passivated Emitter and Rear Locally Diffused Solar Cells Using Atmospheric Pressure Chemical Vapor Deposition of Phosphosilicate Glass and Laser Processing

Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells

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