Fast linear electro-optic effect in a centrosymmetric semiconductor

Berciano, Mathias; Marcaud, Guillaume; Damas, Pedro; Roux, Xavier Le; Crozat, P.; Ramos, Carlos; Pérez‐Galacho, Diego; Benedikovič, Daniel; Marris‐Morini, Delphine; Cassan, Éric; Vivien, Laurent

doi:10.1038/s42005-018-0064-x

Cited by 37 publications

(46 citation statements)

References 34 publications

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“…By using Equation 12we estimate an equivalent χ (2) eq of about 16 pm/V. This value is of the same order of magnitude of that of LN, whose χ (2) is 39 pm/V [28], and one order of magnitude stronger than the most recent measurement of Pockels effect in strained-silicon, which is about 1.8 pm/V [16].…”

Section: Field-induced Refractive Index Variationmentioning

confidence: 73%

“…Even though positive results have been reported [10,11], very recent works demonstrate that most of the reported measurements have been misinterpreted [12][13][14][15]. The χ (2) that can be induced in silicon by the strain is very low [16,17]. On the other hand, a recent work has demonstrated an alternative way to enable effective χ (2) processes in silicon by making use of silicon rib waveguides with lateral doping forming a p-i-n junction [18].…”

Section: Introductionmentioning

confidence: 99%

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Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

et al. 2019

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Section: Field-induced Refractive Index Variationmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

et al. 2019

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“…For Si nanophotonics, silicon-on-insulator (SOI) substrates have been established as prominent and widely accessible material platforms for many applications, markets, and end-users [1][2][3] . Although pure SOI platforms, with Si as a waveguide core, definitely lacks active on-chip functionalities [4][5][6][7][8] , the fundamental passive function of light guiding is their key advantage 9,10 . Moreover, dense integration ability, low-cost fabrication, high-yield production within Sifoundry-compatible environment are other advantages offered by SOIs.…”

Section: Introductionmentioning

confidence: 99%

Silicon chip-integrated fiber couplers with sub-decibel loss

Benedikovič

Alonso‐Ramos

Guerber

et al. 2020

Smart Photonic and Optoelectronic Integrated Circuits XXII

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Silicon nanophotonics represents a scalable route to deploy complex optical integrated circuits for multifold applications, markets, and end-users. Most recently, applications such as optical communications and interconnects, sensing, as well as quantum-based technologies, among others, present additional opportunities for integrated silicon nanophotonics to expand its frontiers from laboratories to industrial product development. Within a wide set of functionalities that silicon nanophotonic chips can afford, the availability of low-loss optical input/output interfaces has been regarded as a major practical obstacle that hampers long-term success of integrated photonic platforms. Indeed, fiber-chip interfaces based on diffraction gratings are an attractive solution to resonantly couple the light between planar waveguide circuits and standard single-mode optical fibers. Surface grating couplers provide much more alignment tolerance in fiber attach compared with most conventional edge-coupled alternatives, while retaining the much-needed control of the fiber placement on the chip surface and wafer-level-test capability that the in-plane convertors lack. Here, we report on our recent advances in the development of high-performance fiber-chip grating couplers that exploit the blazing effect. This is achieved with well-established dual-etch processing in interleaved teeth-trench arrangements or using L-shaped grating-teeth-profile geometries. The first demonstration of the L-shaped-based grating coupler yielded a coupling loss of-2.7 dB, seamlessly fabricated into a 300-mm foundry manufacturing process using 193-nm deep-ultraviolet stepper lithography. Moreover, silicon metamaterial L-shaped fiber couplers may promote robust sub-decibel coupling of light, reaching a simulated coupling loss of-0.25 dB, while featuring device layouts (>120 nm) compatible with lithographic technologies in silicon semiconductor foundries.

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“…Ge thus provides singular advantages and complementarities over pure Si platforms. Group-IV nanophotonics therefore enable complex on-chip functionalities [6][7][8][9][10] , from light generation and modulation to waveguiding and light detection [11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Benedikovič

Virot

Aubin

et al. 2020

Integrated Optics: Devices, Materials, and Technologies XXIV

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Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud services. Moreover, a number of nanophotonic functions are now available on a single chip, as they take advantages of siliconfoundry process maturity and epitaxial germanium integration. Optical photodetectors are key building blocks in the library of group-IV components and their performances are quite successful nowadays. In particular, silicon-germanium waveguide-integrated photodetectors are fixing new standards for next generation of on-chip interconnects in terms of compactness, speed, power consumption and cost. Indeed, conventional pin photodetectors yield good responsivities (~1 A/W in a 1.5 µm wavelength range), high bandwidths (~50 GHz), and dark currents well below 1 µA. Despite recent advances, their optical power sensitivities remain rather modest and speeds are limited to 25 Gbps only, however. Compensating for the insufficient photodetector sensitivity requires higher transmitter output powers and therefore higher energy consumption. Additional energy savings can be obtained by eliminating receiver electronics. Alternatively, an appealing approach is to exploit device structures with an internal multiplication gain to lower even more the power budget and improve energy efficiency of chip-based optical links. In this work, we report on waveguideintegrated photodetectors with lateral silicon-germanium-silicon heterojunctions. Here, we present avalanche photodetectors fabricated on 200-mm silicon-on-insulator wafers using complementary metal-oxide-semiconductorcompatible processes. Devices operate in the low-gain-regime to facilitate high-speed link operations at 1.55 µm wavelengths. An error-free signal detection was achieved at 28 Gbps, with power sensitivity of-11 dBm for 10-9 biterror-rate, which is a relevant link rate for emerging chip-scale optical interconnects.

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Fast linear electro-optic effect in a centrosymmetric semiconductor

Cited by 37 publications

References 34 publications

Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

Silicon chip-integrated fiber couplers with sub-decibel loss

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

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