Fast-neutron irradiation effects on monolayer MoS<sub>2</sub>

Tang, Ge; Pam, Mei Er; Zhang, Hui; Shu, Zhiwen; Feng, Peng; Wei, Biao; Ang, L. K.; Yang, Hui Ying; Li, Mo

doi:10.7567/1882-0786/ab18b5

Cited by 10 publications

(6 citation statements)

References 42 publications

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“…In general, vibrations and shocks are not a threat for nanodevices and vacuum and thermal cycles are widely experimented in laboratories [9][10][11][12] . Similarly, the effect of radiation has been largely investigated for graphene [13][14][15][16] and well-known TMDs, such as 𝑀𝑜𝑆 2 , 𝑊𝑆 2 , 𝑀𝑜𝑆𝑒 2 , and 𝑊𝑆𝑒 2 13,[17][18][19][20][21][22] , although most of the irradiation studies have been carried out using high energy protons, ions, electrons or 𝛾 beams, typically in the 𝑀𝑒𝑉 range. However, the application of these materials in the context of radiation-based medical diagnostics and treatments, radioprotection, monitoring of special nuclear materials or instrumentation, and in other areas of nuclear science, also requires the understanding of their behavior when exposed to lower energy radiation sources.…”

Section: Introductionmentioning

confidence: 99%

Electron irradiation of multilayer PdSe₂ field effect transistors

et al. 2020

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Palladium diselenide (𝑃𝑑𝑆𝑒 2 ) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, 𝑃𝑑𝑆𝑒 2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain 𝑃𝑑 leads enable contacts with resistance below 350 𝑘Ω • 𝜇𝑚. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 𝑘𝑒𝑉 electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 𝑒 − /𝑛𝑚 2 dramatically change the transistor behavior demonstrating a high sensitivity of 𝑃𝑑𝑆𝑒 2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than ∼ 4000 𝑒 − /𝑛𝑚 2 . The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trapping in slow trap states at the 𝑆𝑖/𝑆𝑖𝑂 2 interface.

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Section: Introductionmentioning

confidence: 99%

Electron irradiation of multilayer PdSe₂ field effect transistors

et al. 2020

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“…Therefore, the V S is easier to generate in MoS 2 after irradiation of high energy particle. On the one hand, with the increase of vacancy concentration, the restoring force constant of Mo-S bonds is continuously weakened, resulting in the red shift of the E 1 2g mode [11,16,27]. On the other hand, as will be discussed in the discussion section, part of OH and O adsorbed on the surface lying close to V S tends to occupy the positions of V S , forming substitutional defects of (OH)s and Os.…”

Section: Figures 2(amentioning

confidence: 96%

“…However, few studies have been carried out on the neutron irradiation effects of TMDs. In 2019, Tang et al [16] reported the variation of optical properties of monolayer MoS 2 under neutron irradiation. Their results showed that the crystal structure of monolayer MoS 2 was seriously damaged, and a sharp degradation of luminescence property was observed after irradiation fluence of 1.5 × 10 13 n/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Radiation damage and abnormal photoluminescence enhancement of multilayer MoS₂ under neutron irradiation

Xiong

Zhu

Wang

et al. 2021

J. Phys.: Condens. Matter

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In this work, neutron irradiation effects on the optical property of multilayer MoS2 have been investigated in depth. Our results display that the intensity of the photoluminescence (PL) spectra of MoS2 flakes tends to slightly decrease after exposed to neutron irradiation with low fluence of 4.0 × 108 n/cm2. An unexpected improvement of PL intensity, however, is observed when the irradiation fluence accumulates to 3.2 × 109 n/cm2. Combined with the experimental results and first-principles calculations, neutron irradiation damage effects of multilayer MoS2 are analyzed deeply. Sulfur vacancy (V S) is found to be responsible for the attenuation of the PL intensity as a major defect. In addition, our results reveal that the adsorbed hydroxyl groups (OH) and oxygen atoms (O) on the surface of MoS2 flakes not only promote the transition from trion excitons to neutral excitons, but also repair the V S in MoS2, both of which contribute to the enhancement of luminescence properties. The detailed evolution process of irradiation-induced defects is discussed to reveal the microscopic mechanism of the significantly difference in luminescence intensity of MoS2 under different irradiation stages. This work has great significance for evaluating the neutron radiation hardness of multilayer MoS2, which is helpful to enrich the fundamental research on neutron irradiation effects.

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“…Extensive investigations have been carried out to demonstrate the effects of exposure to deep ultraviolet light, neutron, electron, , proton, , and gamma-ray irradiation , on the electronic and optical properties of TMDs. However, only a few studies have evaluated irradiation-induced magnetism in TMDs. − Mathew et al observed that proton irradiated (2 MeV) MoS 2 flakes (200 μm) exhibited a ferrimagnetic behavior, and its origin has been explained based on vacancy clusters, isolated vacancies, and the formation of edge structures .…”

Section: Introductionmentioning

confidence: 99%

Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS₂ Sputtered Few-Layered Thin Films

Anbalagan

Chan

et al. 2023

ACS Nano

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Defect engineering is of great interest to the two-dimensional (2D) materials community. If nonmagnetic transition-metal dichalcogenides can possess room-temperature ferromagnetism (RTFM) induced by defects, then they will be ideal for application as spintronic materials and also for studying the relation between electronic and magnetic properties of quantum-confined structures. Thus, in this work, we aimed to study gamma-ray irradiation effects on MoS2, which is diamagnetic in nature. We found that gamma-ray exposure up to 9 kGy on few-layered (3.5 nm) MoS2 films induces an ultrahigh saturation magnetization of around 610 emu/cm3 at RT, whereas no significant changes were observed in the structure and magnetism of bulk MoS2 (40 nm) films even after gamma-ray irradiation. The RTFM in a few-layered gamma-ray irradiated sample is most likely due to the bound magnetic polaron created by the spin interaction of Mo 4d ions with trapped electrons present at sulfur vacancies. In addition, density functional theory (DFT) calculations suggest that the defect containing one Mo and two S vacancies is the dominant defect inducing the RTFM in MoS2. These DFT results are consistent with Raman, X-ray photoelectron spectroscopy, and ESR spectroscopy results, and they confirm the breakage of Mo and S bonds and the existence of vacancies after gamma-ray irradiation. Overall, this study suggests that the occurrence of magnetism in gamma-ray irradiated MoS2 few-layered films could be attributed to the synergistic effects of magnetic moments arising from the existence of both Mo and S vacancies as well as lattice distortion of the MoS2 structure.

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Fast-neutron irradiation effects on monolayer MoS₂

Cited by 10 publications

References 42 publications

Electron irradiation of multilayer PdSe₂ field effect transistors

Electron irradiation of multilayer PdSe₂ field effect transistors

Radiation damage and abnormal photoluminescence enhancement of multilayer MoS₂ under neutron irradiation

Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS₂ Sputtered Few-Layered Thin Films

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Fast-neutron irradiation effects on monolayer MoS2

Cited by 10 publications

References 42 publications

Electron irradiation of multilayer PdSe2 field effect transistors

Electron irradiation of multilayer PdSe2 field effect transistors

Radiation damage and abnormal photoluminescence enhancement of multilayer MoS2 under neutron irradiation

Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films

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Product

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Fast-neutron irradiation effects on monolayer MoS₂

Electron irradiation of multilayer PdSe₂ field effect transistors

Electron irradiation of multilayer PdSe₂ field effect transistors

Radiation damage and abnormal photoluminescence enhancement of multilayer MoS₂ under neutron irradiation

Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS₂ Sputtered Few-Layered Thin Films