Fast-operating focal plane array with a 128x128 element format based on InSb with the frame-accurate accumulation and function of a range finder

Abstract

Indium antimonide MWIR Focal Plane Array (FPA) have been developed and investigated. FPA consists of two dimensional anys of InSb photodiodes bonded by indium bumps with CMOS-multiplexer and Split-Stirling cooler. Noise equivalent power NEP 7lO' W/pixel and dynamic range 60÷70 dB at frame frequency (800÷1000) Hz.

Electrical properties of InSb p-n junctions prepared by diffusion methods

“…Up to date, 2052×2052 focal matrix is developed on InSb bulk material [2]. The commonly used methods for manufacture InSb p-n junctions are implantation of light ions Be [3][4][5], Mg [3] and Zn [6], as well as diffusion of acceptor impurity Cd [7][8][9][10][11][12]. In diffusion photodiodes, rather high value of the differential resistance -area product R 0 A = 3.4·10 3 Ω·cm 2 was already reported in 1961 [7].…”

Carrier transport mechanisms in reverse biased InSb p-n junctions

“…Due to high structural perfection of InSb single crystals, cooled photodiodes based on them are widely used for detection of infrared radiation within the spectral range 3 to 5 µm [1][2][3][4]. Despite the fact that technology of InSb photodiodes is improved over the last 40 years [5], a number of problems remain valid [6,7].…”