Fast Photoelectric Conversion in the Near‐Infrared Enabled by Plasmon‐Induced Hot‐Electron Transfer

Yu, Yuanfang; Sun, Yue; Hu, Zhenliang; An, Xuhong; Zhou, Dongming; Zhou, He-Qin; Wang, Wenhui; Liu, Kaiyang; Jiang, Jie; Yang, Dandan; Zafar, Zainab; Zeng, Haibo; Wang, Frank; Zhu, Haiming; Jun, Lu; Ni, Zhenhua

doi:10.1002/adma.201903829

Cited by 52 publications

(32 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The response times of Bi 2 O 2 Se/BP, BP, Bi 2 O 2 Se are extracted from the falling edges to be ∼ 9 ms, ∼ 190 ms, and ∼ 180 ms, respectively (Figure 4(d)). The fast response speed of heterojunction is owning to the fast carrier separation at the interface, by which the trapping effect is reduced [14,26]. However, carriers still suffer from the effects of traps arising from defects in the flakes during the lateral transport.…”

Section: Resultsmentioning

confidence: 99%

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector

Xing

Wang

Yang

et al. 2021

Sci. China Inf. Sci.

Self Cite

View full text Add to dashboard Cite

Broadband photodetector has wide applications in the field of remote sensing, health monitoring and medical imaging. Two-dimensional (2D) materials with narrow bandgaps have shown enormous potential in broadband photodetection. However, the device performance is often restricted by the high dark currents. Herein, we demonstrate a high performance broadband photodetector by constructing Bi 2 O 2 Se/BP van der Waals heterojunction. The device exhibits a p-n diode behavior with a current rectification ratio of ∼20. Benifited from the low dark current of the heterojunction and the effective carrier separation, the device achieves the responsivity (R) of ∼ 500 A/W, ∼ 4.3 A/W and ∼ 2.3 A/W at 700 nm, 1310 nm and 1550 nm, respectively. The specific detectivity (D*) is up to ∼ 2.8 × 10 11 Jones (700 nm), ∼ 2.4 × 10 9 Jones (1310 nm) and ∼ 1.3 × 10 9 Jones (1550 nm). Moreover, the response time is ∼ 9 ms, which is more than 20 times faster than that of individual BP (∼ 190 ms) and Bi 2 O 2 Se (∼ 180 ms) devices.Keywords Bi 2 O 2 Se/BP, van der Waals heterojunction, broadband photodetector, low dark current, narrow bandgap

show abstract

Section: Resultsmentioning

confidence: 99%

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector

Xing

Wang

Yang

et al. 2021

Sci. China Inf. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…And unlike metal nanostructures with relatively inert surface, doped semiconductor NCs with rich coordination surface sites enable feasible and tunable surface modification 14 . Despite these unique properties, however, hot-electron harvesting and conversion from doped semiconductor-based plasmon has been rarely reported, except a few recent studies of plasmon induced charge transfer in semiconductor nano-heterostructures and their applications in photocatalysis [15][16][17] and photodetections 18,19 . Plasmon-driven charge injection from doped semiconductors to molecules remains to be established.…”

mentioning

confidence: 99%

Infrared driven hot electron generation and transfer from non-noble metal plasmonic nanocrystals

Zhou

et al. 2020

Nat Commun

Self Cite

View full text Add to dashboard Cite

Non-noble metal plasmonic materials, e.g. doped semiconductor nanocrystals, compared to their noble metal counterparts, have shown unique advantages, including broadly tunable plasmon frequency (from visible to infrared) and rich surface chemistry. However, the fate and harvesting of hot electrons from these non-noble metal plasmons have been much less explored. Here we report plasmon driven hot electron generation and transfer from plasmonic metal oxide nanocrystals to surface adsorbed molecules by ultrafast transient absorption spectroscopy. We show unambiguously that under infrared light excitation, hot electron transfers in ultrafast timescale (<50 fs) with an efficiency of 1.4%. The excitation wavelength and fluence dependent study indicates that hot electron transfers right after Landau damping before electron thermalization. We revealed the efficiency-limiting factors and provided improvement strategies. This study paves the way for designing efficient infrared light absorption and photochemical conversion applications based on non-noble metal plasmonic materials.

show abstract

“…The strongly localized fundamental field induces a desired increase of TH wave and SH wave, which includes second harmonic signal, sum frequency signal and difference frequency signal in the SH wave. These methods are useful for investigating the optical intrinsic loss process or optical coupling loss process in 2D materials based plasmonic-photonic devices to realize the active control of the photoelectric/photothermal energy conversion process such as solar energy conversion [34], photoelectric conversion [35], nanoantenna [36], plasmonic hot carriers controlled higher harmonic generation [37] and high-sensitivity sensing [38,39]. The ability to tune the maximal radiative quality factor from infinite to finite is a unique property for trapped light within the radiation continuum.…”

Section: Introductionmentioning

confidence: 99%

Tunable Lifetime and Nonlinearity in Two Dimensional Materials Plasmonic-Photonic Absorber

2022

View full text Add to dashboard Cite

We investigate a framework of local field, quality factor and lifetime for tunable graphene nanoribbon plasmonic-photonic absorbers and study the second order and third order nonlinear optical response of surface plasmons. The energy exchange of plasmonic-photonic absorber occurs in two main ways: one way is the decay process of intrinsic loss for each resonant mode and another is the decay process of energy loss between graphene surface plasmon (GSP) mode and the external light field. The quality factor and lifetime of the plasmonic-photonic absorber can be obtained with using the coupled mode theory (CMT) and finite difference time domain (FDTD) method, which are effectively tunable with changing Fermi energy, carrier mobility and superstrate refractive index. The evolutions of total energy and lifetime of GSP are also shown, which are helpful for the study of micro processes in a two-dimensional material plasmonic-photonic absorber. The strongly localized fundamental field induces a desired increase of second harmonic (SH) wave and third harmonic (TH) wave. The manipulation of the quality factor and lifetime of the GSP makes graphene an excellent platform for tunable two-dimensional material plasmonic-photonic devices to realize the active control of the photoelectric/photothermal energy conversion process and higher harmonic generation.

show abstract

Fast Photoelectric Conversion in the Near‐Infrared Enabled by Plasmon‐Induced Hot‐Electron Transfer

Cited by 52 publications

References 39 publications

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector

Infrared driven hot electron generation and transfer from non-noble metal plasmonic nanocrystals

Tunable Lifetime and Nonlinearity in Two Dimensional Materials Plasmonic-Photonic Absorber

Contact Info

Product

Resources

About