Fast pixelated quantum-well-based sensor for multi-wavelength photon detection

Antonelli, M.; Ganbold, Tamiraa; Menk, R.H.; Cautero, G.; Jark, W.; Eichert, Diane; Biasiol, G.

doi:10.1088/1748-0221/9/05/c05034

Cited by 5 publications

(5 citation statements)

References 8 publications

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“…These samples have been grown by MBE starting from 500-µm-thick, semi-insulating (001) GaAs substrates. The detailed compositions of the different layers and the fundamental properties of the fabricated materials can be found in [4].…”

Section: Sensor Structure and Developmentmentioning

confidence: 99%

“…Many applications in the infrared region are reported in literature [3]. Recently, QW-based solutions for fast monitoring of FEL and synchrotron radiation in the ultraviolet (UV) and X-Ray regions have also been proposed [4][5][6]. The present work investigates the possibility of exploiting MBE-grown InGaAs/InAlAs QW structures for the production of fast, multi-wavelength sensors, since such objects show a number of features (e.g.…”

Section: Introductionmentioning

confidence: 99%

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Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

et al. 2017

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In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

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Section: Sensor Structure and Developmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

et al. 2017

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“…Recently, QW-based solutions were proposed for the fabrication of fast pixelated photon detectors especially aimed at FEL and SR experiments in ultraviolet and X-Ray regions [12].…”

Section: Quantum Well Detectorsmentioning

confidence: 99%

Fast broad-band photon detector based on quantum well devices and charge-integrating electronics for non-invasive FEL monitoring

Antonelli

Ganbold

Biasiol³

et al. 2016

AIP Conference Proceedings

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“…Owing to their high atomic number and enhanced electron mobility, InGaAs/InAlAs quantum well (QW) detectors have been recently developed as postition-sensitive photon monitors, showing very short response times to 100-fs-wide laser pulses and enhanced photo-charge collection efficiency for Synchrotron Radiation (SR) and Free Electron Laser (FEL) facilities [6][7][8]. In order to build hybrid detectors by using these QW devices, we analysed several configurations to figure out the best fit to comercially available readout chips.…”

Section: Introductionmentioning

confidence: 99%

Double-side pixelated X-ray detector based on metamorphic InGaAs/InAlAs quantum well

et al. 2019

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Due to the high atomic number, low band gap and high electron mobility of III-IV semiconductors, the use of metamorphic InGaAs/InAlAs quantum well-based devices was proposed for fast pixelated photon detectors. In this work, we are presenting a double side-segmented quantum well (QW) device, discussing its spatial resolution and analysing the crosstalk between pixels. The fabricated devices were tested with needle-shaped beams of synchrotron radiation with different energies and spot sizes. The position of the synchrotron radiation was estimated with a 1.3-µm precision. The charge spread in the material and related crosstalk function between pixels were extracted from the position estimation measurements of the photon beams. The results show that the cross-talk between pixels is actually responsible for the different resolutions obtained, regardless of the experimental conditions, pointing out the importance of the geometry of the fabricated devices. Furthermore, it has been observed that the QW pixelation is mandatory for hybrid detector technology.

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Fast pixelated quantum-well-based sensor for multi-wavelength photon detection

Abstract: Fast pixelated quantum-well-based sensor for multi-wavelength photon detectionView the table of contents for this issue, or go to the journal homepage for more 2014 JINST 9 C05034

Cited by 5 publications

References 8 publications

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

Fast broad-band photon detector based on quantum well devices and charge-integrating electronics for non-invasive FEL monitoring

Double-side pixelated X-ray detector based on metamorphic InGaAs/InAlAs quantum well

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