Fast thermal fatigue on top metal layer of power devices

Russo, S.; Letor, R.; Viscuso, O.; Torrisi, Lucia; Vitali, Gianluigi

doi:10.1016/s0026-2714(02)00200-7

Cited by 37 publications

(12 citation statements)

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“…This effect was observed by Ciappa and Malberti [15] on IGBTs subjected to short circuit loads and in that paper denoted as ''metal reconstruction''. Similar short circuit effects on the metallization of high side smart power devices have recently received increased attention [16,17]. Typical failure modes of the devices are bond lift-offs or shorts due to melt-up of the device triggered either by latch-up of the DMOS or thermal runaway.…”

Section: Failure Modes and Mechanismsmentioning

confidence: 99%

Active cycling reliability of power devices: Expectations and limitations

Kanert

2012

Microelectronics Reliability

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Section: Failure Modes and Mechanismsmentioning

confidence: 99%

Active cycling reliability of power devices: Expectations and limitations

Kanert

2012

Microelectronics Reliability

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“…In [9] and [10] life stress test investigations of automotive smart power switches are presented. Both papers focus on the findings from the reliability stress investigations.…”

Section: Discussion Of State-of-artmentioning

confidence: 99%

Modular test system architecture for device, circuit and system level reliability testing

Sleik

Glavanovics

Einspieler

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Reliability stress testing of power semiconductors requires significant development effort for a test apparatus to provide the required functionality. This paper presents a modular test system architecture which focuses on flexibility, reusability and adaptability to future test requirements. Different types of tests for different devices in application circuit configuration can be implemented based on the same modular test system concept. Vital parameters of the device under test (DUT) can be acquired in situ during the running stress test. This enables to collect drift data of this parameters. The control and data acquisition parts of the test system are separated from the actual test circuit. With this physical separation, the same control part can be used for different types of tests. Experimental results of a prototype test system are provided.

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“…The magnitude and spatial distribution of the thermo-mechanical stress, depends on the temperature drop occurring during each thermal cycle and the mechanical and thermal properties of the source metal and the silicon [3][4][5].…”

Section: Reliability Issues Due To Repetitive Avalanche Cyclesmentioning

confidence: 99%