Faster radial strain relaxation in InAs–GaAs core–shell heterowires

Kavanagh, K. L.; Saveliev, Igor; Blumin, M.; Swadener, J.G.; Ruda, Harry E.

doi:10.1063/1.3684964

Cited by 62 publications

(52 citation statements)

References 29 publications

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“…3 Therefore, there have been significant efforts in the past few years to achieve axial and radial heterostructure NWs. Among III-V heterostructure NWs, InAs/GaAs, 4 GaP/GaAs, 5 and GaAs/GaIn 1Àx P x (Ref. 6) core/shell NWs and GaAs/GaSb (Ref.…”

Section: Introductionmentioning

confidence: 99%

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Salehzadeh

Kavanagh

Watkins

2013

Journal of Applied Physics

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We report on the growth of GaSb shells on Au-catalyzed GaAs or GaP nanowires (NWs) using metalorganic vapor phase epitaxy. The large lattice mismatch between GaSb and GaAs (GaP), 7.8% (11.8%), results in surface roughening and GaSb island formation via the Stranski-Krastanov (S-K) growth mode. Based on transmission electron microscopy (TEM) analysis, coherent GaSb islands on GaAs NWs could be grown up to a thickness of 1.8 nm for a core diameter of 34 ± 5 nm. For greater shell thickness of 9 ± 3 nm, equal axial and radial strain relaxation occurred increasing from 74% ± 3% for GaAs/GaSb NWs and 91% ± 2% for GaP/GaSb NWs to 100% with increasing core diameter from 15 ± 2 nm to 55 ± 3 nm. Axial strain is relieved by periodic misfit dislocations with edge components parallel to the growth direction. Tangential relaxation is presumed to occur partially by roughening via the S-K growth mode but dislocations with edge components perpendicular to the growth direction were not detected. Raman scattering measurements were performed on ensembles of NWs and the absolute residual strain in the core and shell were determined from the shift of the zone-center phonon modes. Raman results were consistent with the TEM analysis. It was found that the residual strain is higher in GaAs/GaSb NWs (7.3%) compared to GaP/GaSb NWs (1.7%).

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Section: Introductionmentioning

confidence: 99%

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Salehzadeh

Kavanagh

Watkins

2013

Journal of Applied Physics

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“…20 In fact, there have been reports on strain relaxation through defect formations in other NP radial heterostructures for shell thicknesses more than several times the bulk critical thickness. 21,22 In our InAs/InP NPs, however, no strain relaxation is observed by TEM or diffraction pattern. This is likely because the InP shell is still within the coherency limits for such radial NP heterostructure, which is reported to be higher than that of planar.…”

mentioning

confidence: 73%

Enhanced InAs nanopillar electrical transport by in-situ passivation

Lin

Shapiro

Scofield

et al. 2013

Applied Physics Letters

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“…For example, it was theoretically shown that misfit strains in the core-shell and embedded nanowires can relax by straight misfit edge [12][13][14][15] and screw [16] dislocations, misfit wedge disclinations and dislocation walls [17], prismatic [14,15,[18][19][20][21] and glide [22] dislocation loops, and penny-shape cracks [21]. Experimental evidence of misfit dislocations was demonstrated in GaP-GaN [23], Ge-Si [24], AlN-GaN [25], and InAs-GaAs [26][27][28] core-shell nanowires.…”

Section: Introductionmentioning

confidence: 97%

Wedge disclination dipole in an embedded nanowire within the surface/interface elasticity

Shodja¹,

Rezazadeh-Kalehbasti

Gutkin

2013

Journal of the Mechanical Behavior of Materials

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The elastic behavior of an arbitrary oriented wedge disclination dipole located inside a nanowire, which in turn is embedded in an infinite matrix, is studied within the surface/interface theory of elasticity. The corresponding boundary value problem is provided using complex potential functions. The potential functions are defined through modeling the wedge disclination in terms of an equivalent distribution of edge dislocations. The interface effects on the stress field and strain energy of the disclination dipole and image forces acting on it, the influence of relative shear moduli of the nanowire and the matrix, as well as the different characteristics of the interface are studied thoroughly. It is shown that the positive interface modulus leads to increased strain energy and extra repulsive forces on the disclination dipole. The noticeable effect of the negative interface modulus is the non-classical oscillations in the stress field of the disclination dipole and an extra attractive image force on it.

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Faster radial strain relaxation in InAs–GaAs core–shell heterowires

Cited by 62 publications

References 29 publications

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Enhanced InAs nanopillar electrical transport by in-situ passivation

Wedge disclination dipole in an embedded nanowire within the surface/interface elasticity

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