2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) 2020
DOI: 10.23919/epe20ecceeurope43536.2020.9215810
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Faster switching with less overvoltage - operating a SiC-MOSFET at its speed limit

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Cited by 3 publications
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“…In [17] the ZOS phenomenon was encountered during double pulse measurements with SiC MOSFETs. It was stated that, in contradiction to the expected switching behaviour and by decreasing the gate resistor towards zero, the appearing overvoltages decrease as well.…”
Section: B Fundamentals Of Zosmentioning
confidence: 99%
“…In [17] the ZOS phenomenon was encountered during double pulse measurements with SiC MOSFETs. It was stated that, in contradiction to the expected switching behaviour and by decreasing the gate resistor towards zero, the appearing overvoltages decrease as well.…”
Section: B Fundamentals Of Zosmentioning
confidence: 99%