Fatigue and retention properties of shape memory piezoelectric actuator with non-180° domain switching

Abstract

A shape memory piezoelectric actuator can maintain a piezoelectric displacement without an operating voltage. It has two stable strain states at zero voltage: a poled state and a depoled state. The driving principle of the shape memory piezoelectric actuator is based on reorientation of the non-180° domains in the ferroelectric materials. In this study, a unimorph shape memory piezoelectric actuator with a soft lead zirconate titanate was fabricated. The fatigue and retention properties of this shape memory piezoelectric actuator were investigated. The fatigue behavior of the actuator in the early stages is considered to be closely related to the domain stabilization process. Continuous cycle fatigue tests revealed that the shape memory piezoelectric actuator continues to operate even after 106 cycles. Retention measurements revealed that the depoled state of the actuator was more stable than the poled state. The drift in the actuator displacement over one year was estimated to be less than 10% of the initial shape memory displacement.

Enhanced and stable strain memory in Mn‐doped Pb(Mn1/3Sb2/3)O3–Pb(Zr,Ti)O3 ceramics realized by sesquipolar loading

“…However, if an negative field with half the value is applied, a partially depoled state with more random redistributed domain state would be obtained, leading to a much smaller P r À (B 0 ) than that of B in Figure 2A. 17 Different from soft type PZT, de-aging effect induced by field cycling in Mn-doped PMS-PZT would decrease E c À (see. Maximum strain memory takes place when E À locates around E c À , which can be ascribed to the nearly fully depoled state with randomized domains.…”

“…When E À is lower than E c À , for example 2.0 kV/mm, strain memory first increases and then decreases which is different from that of soft type PZT ceramics, in which strain memory decreases monotonically. 17 Different from soft type PZT, de-aging effect induced by field cycling in Mn-doped PMS-PZT would decrease E c À (see. Figure S1) and this decreased E c À make optimal field move toward the fixed E À leading to the initial increase in strain memory.…”

Preisach Modeling of Electric-Field-Induced Strain of Ferroelectric Material Considering 90° Domain Switching

“…In recent studies, the large nonlinear strain due to domain switching has been used for high-strain actuators [3][4][5] and the strain memory effect. [6][7][8][9] To describe the nonlinear behavior of ferroelectric materials, many constitutive models have been developed by taking phenomenological approaches [10][11][12] and micro-electro-mechanical approaches. [13][14][15] Although these models partly capture and predict nonlinear ferroelectric behavior, they are too complicated or limited for particular situations.…”

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers

“…5 Motivated by these intriguing possibilities in innovative memory applications, we believe that the artificial manipulation of imprint effects is essential to achieve highly efficient nonvolatile shape memories. 23 Herein, we propose that the ferroelectric multilayer structure composed of two different ferroelectric thin films enables artificial control of the imprint effect in ferroelectric hysteresis. More specifically, we show that the shift in ferroelectric hysteresis could be effectively modulated by adjusting the thickness of each ferroelectric layer or the thickness ratio in the ferroelectric multilayered schemes.…”

“…The origin of this imprint effect in ferroelectric materials is the internal electric field induced by electrode configurations, trapped charge, and external processes such as optical and thermal processes. − In terms of realizing the use of piezoelectric strains in ferroelectric materials, Morita et al demonstrated that control of the imprint electric field, which is induced by treatment with a high electrical field of 3.5 kV/mm at 150 °C, could be used to produce viable piezoelectric shape memory devices . Motivated by these intriguing possibilities in innovative memory applications, we believe that the artificial manipulation of imprint effects is essential to achieve highly efficient nonvolatile shape memories …”