Fault Modeling of Graphene Nanoribbon FET Logic Circuits

Abstract

Due to the increasing defect rates in highly scaled complementary metal–oxide–semiconductor (CMOS) devices, and the emergence of alternative nanotechnology devices, reliability challenges are of growing importance. Understanding and controlling the fault mechanisms associated with new materials and structures for both transistors and interconnection is a key issue in novel nanodevices. The graphene nanoribbon field-effect transistor (GNR FET) has revealed itself as a promising technology to design emerging research logic circuits, because of its outstanding potential speed and power properties. This work presents a study of fault causes, mechanisms, and models at the device level, as well as their impact on logic circuits based on GNR FETs. From a literature review of fault causes and mechanisms, fault propagation was analyzed, and fault models were derived for device and logic circuit levels. This study may be helpful for the prevention of faults in the design process of graphene nanodevices. In addition, it can help in the design and evaluation of defect- and fault-tolerant nanoarchitectures based on graphene circuits. Results are compared with other emerging devices, such as carbon nanotube (CNT) FET and nanowire (NW) FET.

Electronic, transport, magnetic, and optical properties of graphene nanoribbons and their optical sensing applications: A comprehensive review

“…In graphene electronic devices, the perfect contact of graphene with metal and reliability of devices are critical issues. [ 91 ]…”

“…In graphene electronic devices, the perfect contact of graphene with metal and reliability of devices are critical issues. [91] Day-by-day increasing demand of the lightweight magnet-based devices such as flexible storage devices encourage scientific community to understand the importance of magnetic behavior of graphene.…”