2020
DOI: 10.1016/j.microrel.2020.113624
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Fault protection for a SiC MOSFET based on gate voltage subjected to short circuit type II

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Cited by 5 publications
(5 citation statements)
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“…The motor's neutral point voltage will be affected, and the drive's configuration will be continually commuting because of the uncontrolled current. In situations where the drive is operating below its peak post-fault rating, flyback diodes have limited impact [9]. Greater values of the load torque or fault detection latency exacerbate this decrement in performance; however, the experimental findings in [13] show that it only affects a tiny portion of the total functioning.…”
Section: A Mosfet Disconnected Circuitmentioning
confidence: 99%
See 2 more Smart Citations
“…The motor's neutral point voltage will be affected, and the drive's configuration will be continually commuting because of the uncontrolled current. In situations where the drive is operating below its peak post-fault rating, flyback diodes have limited impact [9]. Greater values of the load torque or fault detection latency exacerbate this decrement in performance; however, the experimental findings in [13] show that it only affects a tiny portion of the total functioning.…”
Section: A Mosfet Disconnected Circuitmentioning
confidence: 99%
“…Faults in power devices keep them in an on or off state [9]. To avoid a full loss of the drive, the power converter might disconnect the faulty phase and keep the current flowing 2 of 10 in the remaining healthy phases while losing specific control abilities.…”
Section: Introductionmentioning
confidence: 99%
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“…There are many studies on high-speed SC protection circuits applicable to SiC-MOSFETs. [4][5][6][7][8] However, few reports deal with SC protection under current imbalance condition.…”
Section: Study Background and Subjectmentioning
confidence: 99%
“…Therefore, SC protection circuit must provide reliable protection even when current imbalance occurs between chips. There are many studies on high‐speed SC protection circuits applicable to SiC‐MOSFETs 4–8 . However, few reports deal with SC protection under current imbalance condition.…”
Section: Study Background and Subjectmentioning
confidence: 99%