Fault simulation and modelling of microelectromechanical systems

Rosing, R.; Lechner, A.; Richardson, A.; Dorey, A.P.

doi:10.1049/cce:20000505

Cited by 14 publications

(8 citation statements)

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“…The form of (18) reveals that if the nominal values , hold true. Substituting (18) in (17) and assuming that the area is rectangular and equals , we have (19) Using the Mean Value Theorem of calculus, it can be shown that there exists a location within the rectangle area such that (20) …”

Section: Local Manufacturing Variationsmentioning

confidence: 99%

“…Equation (20)- (21) can be used to simplify (19) to: (22) where (23) Equation (22) captures the concept of average manufacturing variations. Since the combdrive capacitance is distributed over an area, the combined effect of all manufacturing variations over the area is equated to an average multiplied by the same area.…”

Section: Local Manufacturing Variationsmentioning

confidence: 99%

“…Hence, BIST suitable for manufacturing test of MEMS is needed. Previous work [13]- [19] has addressed some of these problems. For example, our work [13]- [15] describes a BIST approach that samples outputs from symmetrically located nodes of the MEMS microstructure.…”

Section: Introductionmentioning

confidence: 99%

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Built-In Self-Test of MEMS Accelerometers

Deb

Blanton

2006

J. Microelectromech. Syst.

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A built-in self-test technique that is applicable to symmetric microsystems is described. A combination of existing layout features and additional circuitry is used to make measurements from symmetrically located points. In addition to the normal sense output, self-test outputs are used to detect the presence of layout asymmetry that are caused by local, hard-to-detect defects. Simulation results for an accelerometer reveal that our self-test approach is able to distinguish misbehavior resulting from local defects and global manufacturing process variations. A mathematical model is developed to analyze the efficacy of the differential built-in self-test method in characterization of a wide range of local manufacturing variations affecting different regions of a device and/or wafer. Model predictions are validated by simulation. Specifically, it has been shown that by using a suitable modulation scheme, sensitivity to etch variation along a particular direction is improved by nearly 30%.[1394]

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Section: Local Manufacturing Variationsmentioning

confidence: 99%

Section: Local Manufacturing Variationsmentioning

confidence: 99%

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Built-In Self-Test of MEMS Accelerometers

Deb

Blanton

2006

J. Microelectromech. Syst.

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“…Fig. 1 The method aims to detect any asymmetry caused by local defects, wear, and problems due to imperfection in the design and fabrication process [18]- [20]. It yields higher fault coverage compared to sensitivity testing.…”

mentioning

confidence: 99%

An Electrical-Stimulus-Only BIST IC for Capacitive MEMS Accelerometer Sensitivity Characterization

et al. 2017

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Testing and calibration constitute a significant part of the overall manufacturing cost of microelectromechanical system (MEMS) devices. Developing a low-cost testing and calibration scheme applicable at the user side that ensures the continuous reliability and accuracy is a crucial need. The main purpose of testing is to eliminate defective devices and to verify the qualifications of a product is met. The calibration process for capacitive MEMS devices, for the most part, entails the determination of the mechanical sensitivity.In this work, a physical-stimulus-free built-in-self-test (BIST) integrated circuit (IC) design characterizing the sensitivity of capacitive MEMS accelerometers is presented. The BIST circuity can extract the amplitude and phase response of the acceleration sensor's mechanics under electrical excitation within 0.55% of error with respect to its mechanical sensitivity under the physical stimulus. Sensitivity characterization is performed using a low computation complexity multivariate linear regression model. The BIST circuitry maximizes the use of existing analog and mixed-signal readout signal chain and the host processor core, without the need for computationally expensive Fast Fourier Transform (FFT)-based approaches. The BIST IC is designed and fabricated using the 0.18-µm CMOS technology. The sensor analog front-end and BIST circuitry are integrated with a three-axis, low-g capacitive MEMS accelerometer in a single hermetically sealed package.The BIST circuitry occupies 0.3 mm 2 with a total readout IC area of 1.0 mm 2 and consumes 8.9 mW during self-test operation.

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“…Hence, BIST suitable for manufacturing test of MEMS is needed. Previous work [13]- [17] has addressed some of these problems. For example, our work [13,18] describes a BIST approach that samples outputs from symmetrically-located nodes of the MEMS microstructure.…”

Section: Introductionmentioning

confidence: 99%

Multi-modal built-in self-test for symmetric microsystems

Deb

Blanton

22nd IEEE VLSI Test Symposium, 2004. Proceedings.

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A mathematical model analyzing the efficacy of a built-in self-test technique, applicable to any symmetrical MEMS microstructure, is developed. The model predicts that the BIST technique can also be used to characterize a wide range of local manufacturing variations affecting different regions of the device. Model predictions have been validated by simulation. Specifically, it has been shown that by using a suitable modulation scheme, sensitivity to linear etch variation along a particular direction is improved by nearly 30%.

show abstract

Fault simulation and modelling of microelectromechanical systems

Cited by 14 publications

References 0 publications

Built-In Self-Test of MEMS Accelerometers

Built-In Self-Test of MEMS Accelerometers

An Electrical-Stimulus-Only BIST IC for Capacitive MEMS Accelerometer Sensitivity Characterization

Multi-modal built-in self-test for symmetric microsystems

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