2022
DOI: 10.1016/j.cej.2021.132730
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Favorable grain growth of thermally stable formamidinium-methylammonium perovskite solar cells by hydrazine chloride

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Cited by 25 publications
(23 citation statements)
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“…2a, PL peaks at 760 nm ascribed to bulk perovskites for 2D/3D films is significantly higher than that of the control film, indicating effectively reduced surface defects. 45 In particular, the strongest PL intensity for the perovskite/R-α-BrMBA film demonstrates the optimal passivation effect of the Br-2D perovskite. Besides, the PL peaks at 495 nm for the modified films illustrate the formation of 2D perovskites ( n = 1).…”
Section: Resultsmentioning
confidence: 96%
“…2a, PL peaks at 760 nm ascribed to bulk perovskites for 2D/3D films is significantly higher than that of the control film, indicating effectively reduced surface defects. 45 In particular, the strongest PL intensity for the perovskite/R-α-BrMBA film demonstrates the optimal passivation effect of the Br-2D perovskite. Besides, the PL peaks at 495 nm for the modified films illustrate the formation of 2D perovskites ( n = 1).…”
Section: Resultsmentioning
confidence: 96%
“…We selected five types of high-performance PSCs with similar device architectures, namely, MAPbI 3 , FAMA, FAMACs, CsPbI 3 , and CsPbI 2 Br, which are representatives of state-the-art organic-inorganic hybrid and inorganic PSCs. [44][45][46][47][48] These benchmark high-performance PSCs were fabricated following recipes reported in the literatures, [44][45][46][47][48] with their device parameters summarized in Table 1. J-V characteristics of the five types of PSCs under AM 1.5G (100 mW cm À2 ) are shown in Figure S1, Supporting Information.…”
Section: Resultsmentioning
confidence: 99%
“…Figure b and Figure S18 show the Mott–Schottky plots, which can obtain the built-in potential ( V bi ) according to the Mott–Schottky formula: 1 C 2 = 2 ( V bi V ) A 2 e ε 0 ε normalr N normalA where A is the device area and N A is the carrier concentration. Moreover, the width of the depletion layer ( W p ) can be calculated by the formula of W p = (2ε 0 ε r V bi / eN ) 1/2 , where N is the trap density . The built-in potential of the device is increased from 0.82 V (control) to 0.94 V (PCBM/PVK), 0.92 V (PVK/2FPPD), and 0.99 V (PCBM/PVK/2FPPD).…”
Section: Results and Discussionmentioning
confidence: 99%
“…Meanwhile, the full width at half-maximum (FWHM) of the diffraction peak corresponding to the (110) crystal plane is reduced (Table S2), from 0.140 (control) to 0.121 (PCBM/PVK), 0.118 (PVK/2FPPD), and 0.112 (PCBM/PVK/2FPPD), indicating that the crystal orientation toward the (110) crystal plane increases the PVK crystallinity. 32,51 Particularly, the increase of diffraction peak intensity is observed with insertion of the 2FPPD thin layer. The 2FPPD promotes crystal secondary growth leading to improvement in the crystallinity of PVK.…”
mentioning
confidence: 90%