Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Richter, E.; Gridneva, E.; Weyers, M.; Tränkle, G.

doi:10.1016/j.jcrysgro.2016.05.016

Cited by 30 publications

(17 citation statements)

References 22 publications

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“…The Hall‐effect measurements were complicated by changing signs of the Hall constant during the measurement indicating highly compensated material with low carrier mobility. Therefore, in contrast to the doping with Fe which traps electrons, no serious statement about the charge carrier density and the resulting charge carrier type was possible here. That means, however, that a part of the electrical active carbon or a directly related defect is incorporated as an acceptor and another part or a directly related defect of approximately the same amount must be incorporated as a donor with a similar activation energy.…”

Section: Resultsmentioning

confidence: 94%

“…in diameter with a 0.2° miscut toward

(1 \bar{1} 00)

. The HVPE growth process was the same as described before with additional injection of pentane as doping source . Liquid pentane (electronic grade, Dockweiler Chemicals) in a bubbler has been attached like a conventional metalorganic doping source to the gas mixing system and was transported by hydrogen as carrier gas.…”

Section: Methodsmentioning

confidence: 99%

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Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Richter

Beyer

Zimmermann

et al. 2019

Crystal Research and Technology

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Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 10 10 cm at room temperature found for a carbon concentration of 8.8 × 10 18 cm −3 . For higher carbon levels up to 3.5 × 10 19 cm −3 , a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as C N with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, C N -a-C Ga -a-C N and C N -a-C Ga -c-C N , are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 10 18 cm −3 .

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Section: Resultsmentioning

confidence: 94%

“…in diameter with a 0.2° miscut toward

(1 \bar{1} 00)

Section: Methodsmentioning

confidence: 99%

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Richter

Beyer

Zimmermann

et al. 2019

Crystal Research and Technology

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“…GaN samples are considered to be high-resistivity or semiinsulating when the concentration of free electrons or holes at room temperature is below the sensitivity limit of electrical measurement methods. Examples are Fe-, Zn-, or C-doped GaN, where the concentration of acceptors exceeds the concentration of shallow donors and the Fermi level is located close to the À/0 transition level of the Fe Ga (0.6-0.7 eV below the conduction band), [28,29] Zn Ga (0.35-0.40 eV above the valence band), [9] or C N (%0.9 eV above the valence band). [30,31] Note that, the concentrations of donors and acceptors do not need to be close to each other (high compensation ratio) to make a wide-bandgap semiconductor semi-insulating.…”

Section: Semi-insulating Ganmentioning

confidence: 99%

Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors

Reshchikov

2020

Physica Status Solidi (a)

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The intensity of defect‐related photoluminescence (PL) in semiconductors changes with temperature, and it usually decreases exponentially above some critical temperature, a process called the PL quenching. Herein, main mechanisms of PL quenching are reviewed. Most examples are given for defects in GaN as the most studied modern semiconductor, which has important applications in technology. Peculiarities of defect‐related PL in I–VII, II–VI, and III–V compounds are also reviewed. Three basic mechanisms of PL quenching are distinguished. Most examples of PL quenching can be explained by the Schön–Klasens mechanism, whereas very few or even no confirmed cases can be found in support of the Seitz–Mott mechanism. Third mechanism, the abrupt and tunable quenching, is common for high‐resistivity semiconductors. Temperature dependence of capture coefficients and a number of other reasons may affect the temperature dependence of PL intensity. The “negative quenching” or a significant rise in PL intensity with temperature is explained by a competition between recombination channels for minority carriers.

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“…The HVPE technology demonstrates two great advantages: (i) a relatively high growth rate, which exceeds 100 µm/h and (ii) a possibility to crystallize high-purity material; concentrations of The HVPE technology demonstrates two great advantages: (i) a relatively high growth rate, which exceeds 100 µm/h and (ii) a possibility to crystallize high-purity material; concentrations of unintentional dopants (silicon, oxygen, iron) are generally of the order of 10 16 cm −3 or even lower. A doping process with germanium or silicon to achieve highly conductive crystals as well as with carbon or iron for SI ones is well recognized and described in the literature, e.g., [33][34][35][36][37]. The main crystallographic growth direction in the HVPE technology is [0001] (the c-direction).…”

Section: Hvpe-gan Wafers-crystallization On Foreign Seedsmentioning

confidence: 99%

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

et al. 2020

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Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.

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Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Cited by 30 publications

References 22 publications

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

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