2017
DOI: 10.1021/acs.langmuir.7b02969
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Fe2O3/BiOI-Based Photoanode with n-p Heterogeneous Structure for Photoelectric Conversion

Abstract: We report a promising photoanode material of FeO/BiOI for efficient photoelectric conversion in solar cells, which was fabricated with BiOI attached to a one-dimensional FeO nanorod array. The two semiconductors of p-type BiOI and n-type FeO formed a heterogeneous structure for efficient charge separation. The highest open circuit voltage and short circuit current of the solar cell can reach 0.41 V and 4.89 mA/cm, respectively. This study opens an available field to develop low-cost and environmentally friendl… Show more

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Cited by 27 publications
(12 citation statements)
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“…Transient photovoltage (TPV) was further used to determine charge carrier diffusion properties, which performed in a self-assembling parallelplate capacitor (details see Experimental section in SI). [37] As shown in Figure 4e, the positive response of BiOCl hydrogel film electrode corresponds to an n-type semiconductor, which is consistent with the result of Mott-Schottky test (Figure 3e). As illustrated in Figure 4e, two response peaks were observed at 2×10 -7 s and 1×10 -4 s. The peak located at 2×10 -7 s represents the charge drift process of built-in electric field along the surface, while the peak at 1×10 -4 s can be used to probe the process of charge diffusion between particles.…”
Section: Photocorrosion Gel Film Electrode Designsupporting
confidence: 86%
“…Transient photovoltage (TPV) was further used to determine charge carrier diffusion properties, which performed in a self-assembling parallelplate capacitor (details see Experimental section in SI). [37] As shown in Figure 4e, the positive response of BiOCl hydrogel film electrode corresponds to an n-type semiconductor, which is consistent with the result of Mott-Schottky test (Figure 3e). As illustrated in Figure 4e, two response peaks were observed at 2×10 -7 s and 1×10 -4 s. The peak located at 2×10 -7 s represents the charge drift process of built-in electric field along the surface, while the peak at 1×10 -4 s can be used to probe the process of charge diffusion between particles.…”
Section: Photocorrosion Gel Film Electrode Designsupporting
confidence: 86%
“…The photogenerated electrons can easily travel from conduction band of BiVO 4 to that of WO 3 due to band alignment, and then transfer to the Pt counter electrode through FTO substrate. Meanwhile, the photogenerated holes from WO 3 will be injected to the valence band of BiVO 4 , and then reach to the Co-Pi OEC, catalyzing the water oxidation process with improved reaction kinetics owing to the efficient charge separation and transfer in heterojunction. , It should be mentioned that in the Co-Pi@BiVO 4 /WO 3 heterojunction photoanode, the light scattering/trapping effect of NPAs structure increases the light harvesting efficiency, and the as-formed type II BiVO 4 /WO 3 heterojunction with an intimate contact of thin conformal BiVO 4 layer on the surface of WO 3 NPAs enhances the charge carrier separation/transport ability at the WO 3 /BiVO 4 interface. More importantly, the decoration of Co-Pi OEC further improves the photostability of Co-Pi@BiVO 4 /WO 3 heterojunction photoanode and promotes the water oxidation kinetics.…”
Section: Results and Discussionmentioning
confidence: 99%
“…It is interesting to note that this oxyhalide semiconductor also has an environmentally benign character [10]. The wider application of BiOI can extend for a photoanode used in photoelectrochemical devices [11][12][13][14][15][16][17]. Several ways are common to synthesize BiOI, either including the solvent usage or solvent-less process [5,11,16,[18][19][20].…”
Section: Introductionmentioning
confidence: 99%