Fe₃GaTe₂/MoSe₂ ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices

Abstract

Spin-valve heterojunction plays a vital role in many technologies such as non-volatile magnetic random-access memories (MRAMs) and high-density magnetic recording. In particular, spin-valve device based on two-dimensional van der Waals...

Room-Temperature and Tunable Tunneling Magnetoresistance in Fe3GaTe2-Based 2D van der Waals Heterojunctions

“…However, this value is still lower than that of FGT/h-BN/FGT (TMR = 300%, P = 77%, 4.2 K) due to the wider band gap and better spin-preservation abilities of h-BN. The temperature evolution of the P magnitude can be described by the equation of P ( T ) = P (0)­(1 – α T 3/2 ) based on Bloch’s law, where P (0) and α refer to the spin polarization at 0 K and the material-dependent constant, respectively. , The α of our device is calculated to be 1.17 × 10 –4 K –3/2 , which is comparable to the value reported in other literature studies. ,− …”

“…Comparison of the spin polarization of FM metal/2D vdW heterostructure, FGT-based all-2D vdW heterostructure and Fe 3 GaTe 2 -based all-2D vdW heterostructure from previous reports. ,,,,,− ,,,− …”

“…30 The P of Fe 3 GaTe 2 is much larger than that of most reported 2D materials sandwiched by conventional 3D FM electrodes, such as Co/graphene/Co (TMR = 1%, P = 7.1%, 3 K) 31 and NiFe/MoS 2 /NiFe 13 (TMR = 0.73%, P = 6.2%, 20 K) (Figure 5). Compared to other all-2D vdW heterostructures (Figure 5), this value is also higher than that of FGT/h-BN/FGT (TMR = 160%, P = 66%, 4.2 K), 28 FGT/ InSe/FGT (TMR = 41%, P = 41%, 10 K), 20 Fe 3 GaTe 2 /MoS 2 / Fe 3 GaTe 2 (TMR = 15.89%, P = 27% 10 K), 23 Fe 3 GaTe 2 / MoSe 2 /Fe 3 GaTe 2 (TMR = 37.7%, P = 39.8%, 2 K), 25 and is comparable to that of Fe 3 GaTe 2 /WSe 2 /Fe 3 GaTe 2 (TMR = 210%, P = 71.5%, 10 K). 24 However, this value is still lower than that of FGT/h-BN/FGT (TMR = 300%, P = 77%, 4.2 K) 21 due to the wider band gap and better spin-preservation abilities of h-BN.…”

“…The recent discovery of the above-room-temperature intrinsic ferromagnetic 2D vdW crystal Fe 3 GaTe 2 with a large PMA and high saturation magnetic moment has shed light on the fabrication of room-temperature MTJs for practical use . Despite that room-temperature spin valves applying some of the TMDCs as nonmagnetic interlayers have been investigated, such as MoS 2 , WSe 2 , and MoSe 2 , the research on room-temperature Fe 3 GaTe 2 -based MTJs with a vdW WS 2 barrier is still not reported.…”

Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions

“…During the publication of this work, we also published our collaborated work using WSe 2 as spacer 50 and our another work using MoSe 2 spacer. 59 4. Experimental section A standard six-terminal Hall bar pattern was pre-fabricated on a Si substrate with a 300 nm oxidized layer using a direct laser-writing machine (MicroWriter ML3, DMO).…”