Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

Zubov, F. I.; Muretova, M. E.; Asryan, Levon V.; Semenova, Elizaveta; Maximov, M. V.; Zhukov, A. E.

doi:10.1063/1.5039442

Cited by 12 publications

(5 citation statements)

References 26 publications

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“…This is due to the fact that the Al composition reverse linear gradient double waveguide layer reduces the inclination angle of the Fermi energy level, resulting in a decrease of the barrier difference between the nwaveguide layer and the GaAsP potential barrier. 21 The holes injection potential barriers of LD1, LD2 and LD3 are 147, 156 and 129 meV, respectively, indicating LD3 has a high holes injection efficiency. 22 Meanwhile, the electrons block potential barriers of LD1, LD2 and LD3 are 453, 426 and 596 meV, respectively.…”

Section: Resultsmentioning

confidence: 97%

Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties

Zhao,

Dong,

Jia

et al. 2024

ECS J. Solid State Sci. Technol.

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The double waveguide structure of a 1060 nm laser diode with different Al composition linear gradient was designed for achieving high output power. In contrast to the single waveguide layer with Al-free composition gradient structure, the double waveguide layer with a reverse Al composition gradient from n side to p side showed excellent optoelectronic properties. We found that the reverse Al composition gradient double waveguide layer could decrease injection potential barrier for electrons and holes, as well as has a high block leakage potential barrier, which can be help to increase carrier transport and optical confined factor. Meanwhile, it can improve sheet carrier concentration in order to decrease non-radiative recombination. When the injection current is 6 A, the maximal output power and peak wall-plug conversion efficiency are 6.12 W and 81.1%, respectively. The influencing mechanism of these photoelectric parameters on power and wall-plug conversion efficiency was discussed. The novel waveguide structure will be favorable for designing epitaxial structure and providing a theoretical basis for high-power laser diode.

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Section: Resultsmentioning

confidence: 97%

Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties

Zhao,

Dong,

Jia

et al. 2024

ECS J. Solid State Sci. Technol.

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“…Потоки носителей заряда при наличии и в отсутстие АБС определялись с помощью формулы Тсу−Есаки [9] посредством численного интегрирования, как описано в работе [10]. Вычисляемые потоки сквозь АБС включали как туннельное пропускание носителей заряда с энергиями, не превышающими энергетический барьер, так и надбарьерное прохождение носителей с энергиями больше энергии барьера.…”

Section: методика расчетаunclassified

Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом

Muretova¹,

Zubov²,

Асрян

et al. 2022

Физика И Техника Полупроводников

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Using numerical simulation, a search is carried out for designs of asymmetric barrier layers (ABLs) for a laser diode having GaAs waveguide and emitting at the wavelength λ = 980 nm. A pair of ABLs, adjoining the active region on both sides, blocks undesired charge carrier flows and suppresses parasitic spontaneous recombination in the waveguide layers. Optimal designs of ABLs based on AlGaAsSb and GaInP for blocking electrons and holes, respectively, are proposed that make it possible to reduce the parasitic recombination current down to less than 1% of the initial value. To suppress electron transport, an alternative structure based on three identical AlInAs barriers is also proposed. The GaAsP spacers separating these barriers from each other have different thicknesses. Due to this, its own set of quasi-bound (resonant) states is formed in each spacer that is different from the neighbor spacer set of states. As a result of this, the resonant tunneling channels are blocked: the parasitic electron flow is reduced by several tens of times in comparison with the case of spacers of equal thickness.

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“…Это связано с тем, что эффективная масса дырок значительно больше электронной и поэтому для дырок скорость туннелирования будет меньше, чем для электронов, при одинаковых C (см. (12)).…”

Section: результаты и обсуждениеunclassified

“…где F CL и E C -положения квазиуровня Ферми электронов в левом СОО и дна зоны проводимости в СОО соответственно. Используя формулу Тсу−Эсаки [12], найдем поток носителей в одном направлении (слева направо) в отсутствие АБС:…”

Section: заключениеunclassified

Паразитная Рекомбинация В Лазере С Асимметричными Барьерными Слоями

Зубов¹,

Муретова²,

Паюсов³

et al. 2020

Физика И Техника Полупроводников

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In a laser with asymmetric barrier layers (ABLs) two thin barrier layers adjacent to the active region on both sides are aimed at prevention of bipolar population of the waveguide layers and, accordingly, at suppression of parasitic recombination in them. In the present work, a theoretical model of the laser with ABLs based on rate equations is proposed, which includes unwanted carrier leakage that inevitably occurs in lasers with ABLs implemented in practice. Solutions of the equations for the steady-state mode are obtained. Using an example of a laser based on an InGaAs/GaAs quantum well (lasing wavelength λ = 980 nm) the effect of the leakage through ABLs on device characteristics is studied. The parasitic fluxes suppression ratios C of ABLs that are required for prevention of unwanted impact of waveguide recombination are estimated. For the case under consideration the effect of using ABLs becomes pronounced at the suppression ratios C ≥ 102. To suppress 90% of the parasitic current, C should be equal to 2.3 · 10^4. In the work, we also study the influence of ABLs on the useful fluxes of carriers entering the active region.

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Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

Cited by 12 publications

References 26 publications

Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties

Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties

Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом

Паразитная Рекомбинация В Лазере С Асимметричными Барьерными Слоями

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