Feasibility Study of Ion-Cut InP Photoconductor Devices on Glass Substrates

Abstract

Photoconductive devices, prefabricated on semi-insulating InP, were integrated on glass substrates using hydrogen-induced layer transfer (ion-cut) combined with adhesive bonding. The prefabricated photodetectors were implanted through by hydrogen ions and transferred twice to achieve device-up configuration. The transferred devices exhibited both higher photocurrent and dark current when compared with bulk devices. Transient response measurement showed a long-lived tail that persisted after the initial ''fast'' response, indicative of trapmediated transport due to the implant-related localized states. Our study showed that the ion-cutting layer transfer process yielded functional photodetectors. The residual defects remain a challenging issue for the ion-cut process.

Formation and transfer of GaAsN nanostructure layers

“…2) and D, 3 as well as H/He co-implantation. 4,5 To date, ion-cut has been used to transfer InP to glass, 6 SiGe to Si, 7,8 SiC to Si (Ref. 9) and glass, 10 GaSb to glass 11 and GaAs, 12 Ge to Si, 13 garnet to Si, InP, and GaAs, 14 and complex oxides such as SrTiO 3 to glass 15 and LiNbO 3 to silicon.…”

Ion-Cut Transfer of InP-Based High Electron Mobility Transistors

“…5 and 6); in a few cases, the transfer of minority carrier devices has been accomplished. 7,8 In this work, we studied the feasibility and effects of ion-cut transfer in the case of a III-V majority carrier device, an InP-based modulation doped field effect transistor (MODFET). Such transistors are of interest in heterogeneous integration because they exhibit exceptionally high electron mobility.…”