Feature issue introduction: Optical Phase Change Materials

Haglund, Richard F.; Hewak, Daniel W.; Ramanathan, Shriram; Hu, Juejun

doi:10.1364/ome.8.002967

Cited by 2 publications

(1 citation statement)

References 12 publications

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“…The phase change of the GSST could be supposed to be similar to that of the GST-PCM 18 , which can be triggered via thermo-optic (TO), EO/electro-thermal (ET), and all-optical approaches 19 . In general, the a-GSST can be obtained by heating the c-GSST above the melting point followed by rapid cooling (<1 ns).…”

Section: Resultsmentioning

confidence: 99%

Nonvolatile and ultra-low-loss reconfigurable mode (De)multiplexer/switch using triple-waveguide coupler with Ge2Sb2Se4Te1 phase change material

Jiang

2018

Sci Rep

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Mode-division multiplexing (MDM) is a promising approach to dramatically enhance the transmission capacity. A reconfigurable mode (De)multiplexer/switch (RMDS) is a key component for the flexible mode routing in the MDM network. A nonvolatile and ultra-low-loss RMDS is proposed via a triple-silicon-waveguide directional coupler with the Ge2Sb2Se4Te1 (GSST) phase change material (PCM). The nonvolatile property of GSST makes it attractive to reduce the switching power-consumption. Benefiting from the low loss of the GSST-PCM at both amorphous and crystalline states, an RMDS with an ultra-low loss and a high extinction-ratio can be realized. The proposed RMDS is optimally designed by using the full-vectorial finite element method and 3D full-vectorial finite difference time domain method. The numerically simulated results show that a compact RMDS is with the extinction ratios of 18.98 dB and 22.18 dB, ultra-low insertion losses of 0.10 dB and 0.68 dB for the “OFF” and “ON” states, respectively at the operating wavelength of 1550 nm. An ultra-wide bandwidth of 100 nm is achieved for both the “OFF” and “ON” states.

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Section: Resultsmentioning

confidence: 99%

Nonvolatile and ultra-low-loss reconfigurable mode (De)multiplexer/switch using triple-waveguide coupler with Ge2Sb2Se4Te1 phase change material

Jiang

2018

Sci Rep

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Sub-bandgap pulsed laser patterning of planar chalcogenide microphotonics

Mao¹,

Chen²,

Ma³

et al. 2020

Opt. Mater. Express

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Chalcogenide based micro-devices, including integrated photonic waveguides and metasurfaces, have broad applications from mid-infrared nonlinear optical signal processing to reconfigurable photonic metasurfaces. Laser machining is a flexible and cost-effective method for lithography-free patterning and postprocessing of large scale microphotonics. In the past, patterning of chalcogenide thin film materials has been focused on dosage studies with single-point laser exposure, or laser inscription of waveguides. Little effort has been made to find how to reduce feature size or improve the optical qualities of the pattern. In this work, we use a nanosecond laser to create linear features with high refractive index contrast in chalcogenide glass thin film and compare the feature size and surface roughness to other dielectric and metal thin films. By tuning laser power and burst pulse numbers, a minimal feature size of 6 µm and edge roughness of 3 nm can be achieved in chalcogenide phase change material thin film. Non-volatile tunabilities are demonstrated in those laser-patterned microphotonic gratings.

show abstract

Feature issue introduction: Optical Phase Change Materials

Cited by 2 publications

References 12 publications

Nonvolatile and ultra-low-loss reconfigurable mode (De)multiplexer/switch using triple-waveguide coupler with Ge2Sb2Se4Te1 phase change material

Nonvolatile and ultra-low-loss reconfigurable mode (De)multiplexer/switch using triple-waveguide coupler with Ge2Sb2Se4Te1 phase change material

Sub-bandgap pulsed laser patterning of planar chalcogenide microphotonics

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