Features of Diffusion Doping and Boron Gettering of Silicon p-i-n Photodiodes

Kukurudziak, M. S.; Майструк, Э. В.

doi:10.1109/khpiweek57572.2022.9916420

Cited by 11 publications

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“…To create a p-p + -junction (x p+−p = 1-2 µm [4]) (5 in figure 4) and form an ohmic contact, the next thermal operation was diffusion of boron into the back side of the substrate (figure 1(d)). After the diffusion of boron, photolithography 2 was performed to create contact pads for the RE (3, 4 in figure 4) and gold (d Au = 0.5-0.8 µm) (7 in figure 4) with a sublayer of chromium (6 in figure 4) was evaporated onto the front and back sides of the wafers (d Cr = 10-20 nm for back side and d Cr = 60-100 nm for front side).…”

Section: Manufacture Of Samplesmentioning

confidence: 99%

“…PD mesa -AZ4533 had slightly higher values of dark currents than commercial products. This can be explained by the increase in the perimeter of the p-n junction due to the etching slope of the mesa-structure (figure 9) and the corresponding increase in the area of the p-n junction, A p−n = W i P p−n (4) where W i is the width of the SCR (W i ≈ 490 µm [25]), P p-n is the perimeter of the p-n junction. The mesa-structure angle reached 50 • , respectively, the radius of the responsive element increased by 3-4 µm.…”

Section: Dark Current Densitymentioning

confidence: 99%

“…In our case, p-i-n PDs were made on the basis of high-resistivity p-type conductivity silicon of resistivity ρ = 18-24 kΩ cm and a MCC lifetime τ = 1.8-2.2 ms. Phosphorus diffusion was carried out from planar sources in two stages, a predeposition and a drive-in. Accordingly, the route of commercial production included four thermal operations and allowed to obtain PD with a maximum value of S pulse = 0.48 A W −1 and S Iλ = 0.5 A W −1 [4]. The specified parameters refer to PD15M-01 («Rythm», Ukraine).…”

Section: Introductionmentioning

confidence: 99%

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High-responsivity silicon p–i–n mesa-photodiode

Kukurudziak

Майструк

2023

Semicond. Sci. Technol.

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Silicon p-i-n mesa-photodiodes have been made. Different variants of masking coating during etching of the mesa-profile have been studied. Comparative characteristic of photodetectors manufacture by planar- and mesa-technology have been carried out. Defect formation on the surface of silicon substrates in different options of technology was investigated. Parameters of photodiodes manufactured by planar and meso technology were investigated. Photodiodes with a meso structure have higher responsivity and lower capacitance than samples made by conventional planar technology.

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Section: Manufacture Of Samplesmentioning

confidence: 99%

Section: Dark Current Densitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-responsivity silicon p–i–n mesa-photodiode

Kukurudziak

Майструк

2023

Semicond. Sci. Technol.

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“…В такому разі потрібно провести дослідження параметрів ФД залежно від глибини залягання дифузійного шару. Щодо p + -p-переходу, то в [14] нами встановлено, що при x p+-p ≥2 мкм та поверхневій концентрації дифундованого бору N B ≥4•10 18 cм -3 (R S ≤16 Ом/□) зростає коефіцієнт поглинання випромінювання в даному шарі, що сприяє зниженню фоточутливості за рахунок зменшення кількості випромінювання відбитого від Au-дзеркала зі зворотної сторони підкладки.…”

Section: методика експериментуunclassified

“…Варто відмітити, що p + -р-перехід з тильної сторони кристалу ФД є мілким (х p+-р ≈1-2 мкм) [14], відповідно будь-які механічні пошкодження можуть порушити структуру p-n-переходу. Нами проведено експеримент: на кристал із зворотної сторони був здійснений механічний вплив шляхом глибокого дряпання, яке порушувало структуру p + -р-переходу, то зміна темнового струму спостерігалась лише в ФЧЕ, який знаходився навпроти області подряпини.…”

Section: механічні пошкодження P + -р переходуunclassified

Technological Causes of p-n-Junction Break-down of Silicon p-i-n Photodiodes

Kukurudziak¹

2022

Microsyst., Electron. & Acoust.

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During the manufacture of coordinate quadrant p-i-n photodiodes with a high reverse bias voltage Ubias≥200 V, it was observed the presence of a systematic lack of products at the level of the dark current of one (rarely several) photosensitive element. After measuring the volt-ampere characteristics, it was seen that the cause of this is a breakdown of the p-n junction. Effective methods of increasing the breakdown voltage are reducing the specific resistance of the silicon used, increasing the thickness of the substrate and the depth of the p-n junctions, reducing the concentration of alloying impurities, but these methods should be used in cases that allow the degradation of the relevant parameters to be neglected. In particular, it is necessary to provide a level of technology that reduces the probability of a breakdown. A number of technological factors that can be the reasons for reducing the breakdown voltage of the p-n junction have been established and investigated. Strong influence on the breakdown voltage. have crystallographic defects, in particular dislocations falling into the region of the p-n junction. By reducing the concentration of alloying impurities, it is possible to significantly reduce the density of dislocations with a small increase in the levels of dark currents. This helps to eliminate the probability of a breakdown. After operations of sprinkling chrome-gold on the reverse side of such a substrate, the appearance of breakdowns was detected. The cause of which are defects formed as a result of local melting of silicon when gold "droplets" with a temperature higher than the melting temperature of silicon fall on it, as a result of boiling in the evaporator. Іt is possible to reduce the probability of the appearance of these defects by spraying from closed evaporators or by increasing the etchability of spraying on the damper. During photolithography, in particular, when etching windows in the oxide, etching wedges are formed, which direct the output of the p-n junction to the surface at an acute angle. These areas are places with an increased level of electric field intensity, respectively, places of probable localization of the breakdown. This can be avoided by using photoresists that provide minimal etching wedges. Irregularities between the oxide windows can also lead to a decrease in the probo voltage, the probability of this can be reduced by careful control of the development and exposure operations and the use of defect-free templates. Another reason for a breakdown can be a violation of the p-n junction due to welding of the contact terminals. In this case, it is a thermal breakdown. This can be avoided by increasing the size of the contact pads with their expansion on silicon oxide, accordingly, welding on the surface of the oxide reduces the probability of a hole. Another method is a local increase in the depth of the p-n junction, but in this case additional technological operations must be carried out.

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Degradation of Silicon Resistivity During Thermal Operations in p-i-n Photodiodes Technology

Kukurudziak

2023

2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT)

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Features of Diffusion Doping and Boron Gettering of Silicon p-i-n Photodiodes

Cited by 11 publications

References 0 publications

High-responsivity silicon p–i–n mesa-photodiode

High-responsivity silicon p–i–n mesa-photodiode

Technological Causes of p-n-Junction Break-down of Silicon p-i-n Photodiodes

Degradation of Silicon Resistivity During Thermal Operations in p-i-n Photodiodes Technology

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