Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties

Abstract

In this work, the physical features of growing epitaxial layers of new solid solutions of (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] from the liquid phase of the tin solution-melt on GaAs (100) substrates were investigated. The conditions required for the formation of the solid solution of molecular substitution were revealed. A possible configuration of the crystal structure of the solid solution (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] is presented. In the spectral photosensitivity of the [Formula: see text]-GaAs–[Formula: see text]-(GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] structures, peaks with maxima at photon energies of 1.37 eV and 2.62 eV were found. The band diagram of the solid solution (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] was presented.

Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

“…Layers of (Si 2 ) 1−x (GaN) x solid solutions were grown on Si (111) substrates by liquid-phase epitaxy from a limited volume of Sn solution-melt in a vertical-type quartz reactor with horizontally located substrates using the technology described in [11,12]. The substrates were separated from each other vertically by graphite supports.…”