Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

Pavlyk, B.; Lys, R. M.; Didyk, R. I.; Shykorjak, J.

doi:10.1134/s1063782615050206

Cited by 6 publications

(5 citation statements)

References 8 publications

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“…According to our previous studies, [ 10 – 13 ], the effect of X-ray exposure to the electronic silicon is accompanied by a slight increase in positive charge in the dielectric surface layer of SiO 2 . As a result, the factor β 1 : β 1 ( D ) > β 1 ( 0 ) slightly increases.…”

Section: Resultsmentioning

confidence: 90%

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Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

et al. 2017

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Changes in conductivity of irradiated and non-irradiated p-Si mono-crystals under the influence of elastic uniaxial mechanical stress were investigated in this paper. An analytical expression was suggested to describe the dependence of surface conductivity as a function of mechanical stress and X-ray irradiation dose. It was shown that 4-angular nano-particles on the surface of “solar” silicon affect the electroconductivity changes under mechanical stress. It was established that X-ray irradiation causes the generation of point defects in silicon. These defects suppress the dislocations movement. It was shown that the resistivity of previously irradiated samples of “electronic” silicon is only slightly sensitive to the influence of uniaxial compression at certain deformation rate.

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Section: Resultsmentioning

confidence: 90%

“…In the process of deformation, the resistance of dislocation-free samples slightly increases. It should be noted that in the case of non-irradiated crystals, the change of deformation rate practically had no effect on the general view of dependences ρ ( σ ) [ 10 , 11 ]. Similar dependences were obtained for irradiated samples (Fig.…”

Section: Resultsmentioning

confidence: 99%

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

et al. 2017

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“…In addition, the metal film deposited on the Si surface contributes to the formation of a site in the near-surface layer, which is an effective getter for deep-level structural defects [9,13]. Such defects can be impurity atoms moved from the sample volume to the near-surface region, Si atoms that leave the lattice nodes at interstitial positions, and vacancies generated at such outputs [11]. Mechano-stimulated rearrangement of the defective state of the crystal and its near-surface layer leads to an increase in the capture centers of charge carriers with an increase in the number of deformation cycles.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, a surface with sprayed metal contacts is an effective getter for deep-level structural defects [9,10]. The discrepancy between the parameters of the crystal lattices and the metal contact sprayed on it leads to the appearance of local mechanical stresses [11]. Radiation exposure of crystals and devices of semiconductor electronics is accompanied by the accumulation of charges on internal defects, changes in surface states, the formation of internal electric fields and fields in the semiconductor-dielectric contact area, and so on [6,9].…”

Section: Introductionmentioning

confidence: 99%

“…These and other mechanical and radiation-stimulated effects stimulate changes in the electrophysical parameters of crystals. As a result, the effects deteriorate the operational characteristics of microelectronic devices [11,12]. Therefore, the study of mechanical stress relaxation processes and their effect on changes in the electrophysical characteristics of Si crystals under the influence of external factors is relevant.…”

Section: Introductionmentioning

confidence: 99%

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Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

Lys¹,

Żyłka²,

Shykorjak³

et al. 2023

Adv. Sci. Technol. Res. J.

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Changes in the resistance of single crystals of p-type conductivity silicon under the action of mechanical loading were investigated in this research. Also, non-irradiated and pre-irradiated X-rays experimental samples were studied. It was found that at small deformation values when they are at the initial stage of the action of elastic deformation, a section forms and increases, on which the resistance practically does not depend on the applied mechanical load. In irradiated crystals, at small deformation values, electron generation processes dominate, which then recombine with the main carriers -holes. The consequence of such processes is the appearance of a maximum increase in electrical resistance at the initial stage of elastic deformation of experimental samples irradiated with X-rays. Charge carrier generation processes begin to dominate with further deformation. Such processes occur as a result of the release of acceptor centers from other complex defects, which are destroyed during the deformation of the Si crystal and captured by mobile dislocations. Thus, the processes of generation of charge carriers prevail over the processes of gettering and, accordingly, a mechano-stimulated decrease in the electrical resistance of p-Si samples occurs.

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The Role of a Thin Aluminum Film in the Reconstruction of Silicon’s Near-Surface Layers

Lys¹,

Pavlyk²,

Slobodzyan³

et al. 2019

Lecture Notes in Mechanical Engineering

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Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

Cited by 6 publications

References 8 publications

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays

Mechanically Stimulated Changes in Surface Electrical Conductivity of X-Irradiated Silicon Crystals

The Role of a Thin Aluminum Film in the Reconstruction of Silicon’s Near-Surface Layers

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