2013
DOI: 10.1134/s1027451013040320
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Features of TiN film deposition by the vacuum-arc method

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Cited by 4 publications
(2 citation statements)
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“…As substrates, we use plates of single crystal silicon Si (KEF 4.5). A TiN layer 17 nm in thickness was applied by the arc method described in paper [6]. The thicknesses of the Si 3 N 4 and SiO 2 bar rier layers with a very low diffusion coefficient for car bon atoms were 0.6 and 0.12 µm, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…As substrates, we use plates of single crystal silicon Si (KEF 4.5). A TiN layer 17 nm in thickness was applied by the arc method described in paper [6]. The thicknesses of the Si 3 N 4 and SiO 2 bar rier layers with a very low diffusion coefficient for car bon atoms were 0.6 and 0.12 µm, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…1 A variety of transition metals have been used to synthesize metal NPs, including gold, 2 nickel, 3 iron (particularly iron oxide), 4 platinum, 5 cobalt, 6 titanium, 7 ruthenium, 8 rhodium, 9 osmium, 10 silver 11 and palladium. 12 In addition, particles consisting of alloys of noble metals, including platinum-palladium, 13 platinum-gold, 14 palladium-gold 15 and palladium-silver 16 have been prepared.…”
Section: Purpose Of Studiesmentioning
confidence: 99%