Femto-second transient absorption spectroscopy for probing near-surface carrier-photon dynamics in gallium nitride

Chouksey, Shonal; Saha, D.; Pendem, Vikas; Aggarwal, Tarni; Udai, Ankit; Ganguly, Swaroop

doi:10.1016/j.apsusc.2020.146225

Cited by 3 publications

(2 citation statements)

References 18 publications

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“…Information of the surface potential obtained from TAS measurements is in corroboration with the results measured by Kelvin probe force microscopy (KPFM) technique. [ 77 ] The surface potential of the O 2 ‐treated sample obtained from KPFM is comes out to be 0.65 eV with positive polarity. However, it is 0.45 eV with negative polarity for the N 2 ‐treated sample.…”

Section: Resultsmentioning

confidence: 99%

“…We have used TAS to study the surface properties of two distinct surfaces of planar GaN. [76,77] Two GaN samples are annealed at high temperatures in oxygen and in nitrogen ambient for comparison of their surface properties. Information of the surface potential obtained from TAS measurements is in corroboration with the results measured by Kelvin probe force microscopy (KPFM) technique.…”

Section: Determination Of Surface Properties In Planar Semiconductorsmentioning

confidence: 99%

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Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Aggarwal

Udai

Banerjee

et al. 2021

Physica Status Solidi (b)

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III-V compound semiconductors laid the foundation for optoelectronic devices and solid-state lighting with wavelengths ranging from infrared to ultraviolet regions. Infrared to green light-emitting diodes (LEDs) were invented in the early 1960s. [1][2][3] However, blue LEDs took another three decades to get established, considering the challenges in defect-free high-quality growth, [4][5][6] and controlled p-doping of wide-bandgap semiconductors. [7][8][9][10] The success of blue LEDs was accomplished by the development of gallium-nitride (GaN) alloyed with indium and aluminum in the late 1980s. [11,12] GaN and related materials have a wurtzite crystal structure and direct bandgap, making them ideal for bright LEDs and laser diodes (LDs). In order to move the emission wavelength to the visible range (2-3.4 eV), InN is alloyed with GaN. [13,14] Advancement in GaN-based LEDs revolutionized the white broadband lighting when laminated with yellow phosphorous coating. Nakamura et al. developed the first high-quality InGaN back in 1992, which paved the way for III-nitride blue and green LEDs/ LDs. [15] In 1995-1996, Nakamura made true blue LEDs possible by developing recombination regions with InGaN. [16] III-nitride devices acquire a wide area of applications due to their wavelength tunability by varying the alloy composition of In and Al in InGaN and AlGaN, respectively. [17,18] Moreover, an additional degree of freedom can be achieved using quantum-confined nanostructures. Emission wavelength and surface/interface material properties can be altered by reducing the dimensionality/size of the devices. [19][20][21] quantum well (QW; 2D), [22][23][24] vertical/lateral nanowires (1D), [25][26][27][28][29] and quantum dots (QDs; 0D) [30][31][32][33] are among the most important quantum-confined nanostructures used in the active regions of modern optoelectronic devices including LEDs, lasers, photodetectors, and solar cells. Improved internal quantum efficiency, [34][35][36] large surface-to-volume ratio, [37] low power

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Section: Resultsmentioning

confidence: 99%

Section: Determination Of Surface Properties In Planar Semiconductorsmentioning

confidence: 99%

Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Aggarwal

Udai

Banerjee

et al. 2021

Physica Status Solidi (b)

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Modulated interfacial band alignment of β-Ga2O3/GaN heterojunction by the polarization charge transfer

Zhu

Zhang

et al. 2022

Applied Surface Science

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Ultrafast dynamics of photoinduced terahertz electron-hole plasma waves in semiconductor junctions

2021

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Femto-second transient absorption spectroscopy for probing near-surface carrier-photon dynamics in gallium nitride

Cited by 3 publications

References 18 publications

Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

Modulated interfacial band alignment of β-Ga2O3/GaN heterojunction by the polarization charge transfer

Ultrafast dynamics of photoinduced terahertz electron-hole plasma waves in semiconductor junctions

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