Modulated interfacial band alignment of β-Ga2O3/GaN heterojunction by the polarization charge transfer

Flexible and Self‐Powered Photoelectrochemical‐Type Solar‐Blind Photodetectors Based on Ag Nanowires‐Embedded Amorphous Ga2O3 Films

“…This suggests that achieving electron transfer at the ITO/a‐Ga 2 O 3 interface presents challenges, while the incorporation of Ag NWs to form the Ag/a‐Ga 2 O 3 interface without a potential barrier is more favorable for facilitating electron transfer. Consequently, this improvement in electron transfer contributes to enhanced device performance [ 58 ] .…”

Engineered interface states and optical absorption of β-Ga2O3/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

“…They also can spontaneously separate photogenerated electron-hole pairs, thereby facilitating the formation of self-powered photodetectors. [1][2][3][4] The photodetector efficiency is mainly determined by the physical properties and interfacial atomic arrangement of heterojunctions. Therefore, an accurate prediction of the electronic and optical properties of the different heterojunction structures can help us to design the photodetector better.…”

“…The available results show that b-Ga 2 O 3 could be constructed with NiO, GaN and SiC to form heterojunctions. 2,6,7 Due to the poor thermal conductivity of b-Ga 2 O 3 , it may suffer from the selfheating effect when the device is in operation, so a material with better thermal conductivity is needed to assist in heat dissipation. The 4H-SiC has a high thermal conductivity (280 W mK À1 at room temperature) and can meet the heat dissipation requirements.…”