“…In this case, Liu et al 100 prepared bismuthene on GaAs, which possessed a large Bi-As binding energy, and as expect bismuthene, induced an electronic band in the band gap of GaAs, opening a gap that has a nontrivial topological nature. Abdelfatah et al 101 doped the p-type dopant tetrafluoro-tetracyanoquinodimethane (F4TCNQ) in bismuthene to achieve surface charge transfer. The doped bismuthene showed a carrier lifetime of 6.5 ms after doping, suggesting enhanced p-type conductivity, which is ascribed to the unusual charge transfer interaction between bismuthene and the F4TCNQ molecules.…”