Fermi-surface parameters of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type PbTe as a function of carrier density

Jensen, J. D.; Houston, Bland; Burke, J. Richard

doi:10.1103/physrevb.18.5567

Cited by 24 publications

(28 citation statements)

References 13 publications

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“…Fig. 6 presents a similar treatment of the available data on PbTe [32,17] and BiTlSeS, which was the subject of a recent study. Novak et al [45] quantified mobility as a function of concentration in a system with a vanishing gap tuned half-way between BiTlSe 2 and BiTlS 2 , two band insulators (one trivial and one topological) with gaps of comparable amplitudes [46].…”

Section: Connection To the Rough Fermi Seafloormentioning

confidence: 88%

“…The key parameter remains the Bohr radius of the host insulator, which by setting the Thomas-Fermi screening length, shapes the local seafloor of the Fermi sea. The reported data for phosphorus-doped silicon [28], arsenic-doped [29], antimony-doped [30] and gallium-doped [31] germanium are presented together with those for p-doped [17,32] and n-doped [32] PbTe, as well as for oxygen-deficient SrTiO 3 [14,33,34,35]. The figure reveals several remarkable features.…”

Section: Introductionmentioning

confidence: 99%

“…In many doped semiconductors, such oscillations have been reported decades ago. The list includes n-doped strontium titanate [10,11,12,13,14], doped IV-VI semiconductors such as PBS [15], PbTe [15,16,17] and SnTe [18,19]. This is also the case of heavily-doped germanium [20,21,22 oscillations of a very large magnitude with a single and well-defined frequency (See Fig.1).…”

Section: Introductionmentioning

confidence: 99%

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On mobility of electrons in a shallow Fermi sea over a rough seafloor

Behnia

2015

J. Phys.: Condens. Matter

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Abstract. Several doped semiconductors, in contrast to heavily-doped silicon and germanium, host extremely mobile carriers, which give rise to quantum oscillations detectable in relatively low magnetic fields. The small Fermi energy in these dilute metals quantifies the depth of the Fermi sea. When the carrier density exceeds a threshold, accessible thanks to the long Bohr radius of the parent insulator, the local seafloor is carved by distant dopants. In such conditions, with a random distribution of dopants, the probability of finding an island or a trench depends on on the effective Bohr radius, a * B and the carrier density, n. This picture yields an expression for electron mobility with a random distribution of dopants:1/2 n −5/6 , in reasonable agreement with the magnitude and concentration dependence of the low-temperature mobility in three dilute metals whose insulating parents are a wide-gap (SrTiO 3 ), a narrow-gap (PbTe) and a "zero"-gap (TlBiSSe) semiconductor.

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Section: Connection To the Rough Fermi Seafloormentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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On mobility of electrons in a shallow Fermi sea over a rough seafloor

Behnia

2015

J. Phys.: Condens. Matter

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“…function of Hall number for the Na-doped PbTe samples studied, plus self-doped (by Pb vacancies) samples measured in previous SdH studies by other groups 14,15 . For a single-parabolic-band model, these two quantities are expected to exactly match with each other, and to lie on the dashed line shown in the figure.…”

Section: A Fermi Surface Topologymentioning

confidence: 99%

“…Such hypotheses can be tested by a direct experimental determination of the Fermi surface topology and its evolution with carrier concentration. To date, such studies have been limited to quantum oscillation measurements performed in the low carrier concentration regime (p ≤ 1.1 × 10 19 cm −3 for full topology) 14,15 , although the enhanced thermoelectric and superconducting properties occur at considerably higher carrier concentrations. A direct measurement of the Fermi surface characteristics for these higher carrier densities is clearly needed.…”

Section: Introductionmentioning

confidence: 99%

Fermi surface evolution of Na-doped PbTe studied through density functional theory calculations and Shubnikov–de Haas measurements

et al. 2016

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We present a combined experimental and theoretical study of the evolution of the low-temperature Fermi surface of lead telluride, PbTe, when holes are introduced through sodium substitution on the lead site. Our Shubnikov-de-Haas measurements for samples with carrier concentrations up to 9.4 × 10 19 cm −3 (0.62 Na atomic %) show the qualitative features of the Fermi surface evolution (topology and effective mass) predicted by our density functional (DFT) calculations within the generalized gradient approximation (GGA): we obtain perfect ellipsoidal L-pockets at low and intermediate carrier concentrations, evolution away from ideal ellipsoidicity for the highest doping studied, and cyclotron effective masses increasing monotonically with doping level, implying deviations from perfect parabolicity throughout the whole band. Our measurements show, however, that standard DFT calculations underestimate the energy difference between the L-point and Σ-line valence band maxima, since our data are consistent with occupation of a single Fermi surface pocket over the entire doping range studied, whereas the calculations predict an occupation of the Σ-pockets at higher doping. Our results for low and intermediate compositions are consistent with a non-parabolic Kane-model dispersion, in which the L-pockets are ellipsoids of fixed anisotropy throughout the band, but the effective masses depend strongly on Fermi energy.

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The properties of the band spectrum parameters in the band‐inversion region of narrow‐gap Ph_1−xSn_xTe

Дмитриев

Lashkarev

Orletskii

et al. 1986

Physica Status Solidi (b)

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A calculation technique based on experimental data is proposed for determining the Dimmock model parameters m i , ,,, g : , P I , 11 of narrow-gap Pbl -&h,Te alloys. From the six-band model, a relation is derived to describe the dependence of the current carrier g-factor on carrier concentration of the alloy composition. The composition dependence of the matrix element of the momentum operator (MOME) P I as derived earlier by the authors is studied over a wide range of compositions x. The analysis of experimental data reveals an anomalous behaviour of P I in the region of band inversion. The dependence P I ( " ) may be approximated by an exponential function. The dependences of effective masses, the g-factor of electrons and holes, as well as mass anisotropy coefficients, on composition and carrier concentration are analyzed on the assumption that P is a function of composition. The results of the analysis are compared with experiment. It is shown that the disagreement between theory and experiment can be substantially reduced by substituting P I ( " ) for P I = const. Relations are given by which the carrier parameters in Pbl-,Sn,Te can be calculated in terms of the Dimmock model. k33nome~a M e T o A m a o n p e Z e n e H m a n a p a M e T p o B M o a e n t i & m o K a m?, ,I ; g : ; P I , 11 HJIH

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Fermi-surface parameters ofp-type PbTe as a function of carrier density

Cited by 24 publications

References 13 publications

On mobility of electrons in a shallow Fermi sea over a rough seafloor

On mobility of electrons in a shallow Fermi sea over a rough seafloor

Fermi surface evolution of Na-doped PbTe studied through density functional theory calculations and Shubnikov–de Haas measurements

The properties of the band spectrum parameters in the band‐inversion region of narrow‐gap Ph_1−xSn_xTe

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Fermi-surface parameters ofp-type PbTe as a function of carrier density

Cited by 24 publications

References 13 publications

On mobility of electrons in a shallow Fermi sea over a rough seafloor

On mobility of electrons in a shallow Fermi sea over a rough seafloor

Fermi surface evolution of Na-doped PbTe studied through density functional theory calculations and Shubnikov–de Haas measurements

The properties of the band spectrum parameters in the band‐inversion region of narrow‐gap Ph1−xSnxTe

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The properties of the band spectrum parameters in the band‐inversion region of narrow‐gap Ph_1−xSn_xTe