A growing number of transition metal oxyhydrides have recently been reported, but they are all confined to perovskite-related structures with corner-shared octahedra. Using high pressure synthesis, we have obtained vanadium oxyhydrides BaVO 3−x H x (0.3 ≤ x ≤ 0.8) with a 6H-type hexagonal layer structure consisting of faceshared as well as corner-shared octahedra. Synchrotron X-ray and neutron diffraction measurements revealed that, in BaVO 2.7 H 0.3 , H − anions are located selectively at the face-shared sites, as supported by DFT calculations, while BaVO 2.2 H 0.8 contains H − anions at both sites though the face-shared preference is partially retained. The selective hydride occupation for BaVO 2.7 H 0.3 appears to suppress electron hopping along the c axis, making this material a quasi-two-dimensional metal characterized by anomalous temperature dependence of the electrical resistivity and strong antiferromagnetic fluctuations. In contrast, the anion disordered BaVO 3−x H x in hexagonal (x ≈ 0.8) and cubic (x ≈ 0.9) forms exhibits a semiconducting behavior. This study offers a wide opportunity to develop transition metal oxyhydrides having various polyhedral linkages, along with site preference of H/O anions, aimed at finding interesting phenomena.