Ferrite-ferroelectric hybrid wave phase shifters

Устинов, А. Б.; Srinivasan, G.; Kalinikos, B. A.

doi:10.1063/1.2432953

Cited by 138 publications

(72 citation statements)

References 11 publications

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“…A ferrite-ferroelectric layered structure, such as a ME composite, opens up the possibility of dual-tunable microwave devices, which offers higher efficiency, lower noise, compact size and lightweight compared to conventional microwave deceives. Following theoretical investigations, Ustinov et al [122] reported the development of such ME devices. Their ME dual phase shifter based on FMR is a bilayer ME composite consisting of a ferrite YIG layer with a thickness of 5.7 μm and a ferroelectric BST layer with a thickness of 500 μm.…”

Section: Phase Shiftersmentioning

confidence: 99%

Status and Perspectives of Multiferroic Magnetoelectric Composite Materials and Applications

et al. 2016

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Multiferroic magnetoelectric (ME) composites are attractive materials for various electrically and magnetically cross-coupled devices. Many studies have been conducted on fundamental understanding, fabrication processes, and applications of ME composite material systems in the last four decades which has brought the technology closer to realization in practical devices. In this article, we present a review of ME composite materials and some notable potential applications based upon their properties. A brief summary is presented on the parameters that influence the performance of ME composites, their coupling structures, fabrications processes, characterization techniques, and perspectives on direct (magnetic to electric) and converse (electric to magnetic) ME devices. Overall, the research on ME composite systems has brought us closer to their deployment.

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Section: Phase Shiftersmentioning

confidence: 99%

Status and Perspectives of Multiferroic Magnetoelectric Composite Materials and Applications

et al. 2016

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“…[1][2][3][4][5][6][7][8][9] Multiferroic composites consisting of ferro/ferrimagnetic and ferroelectric phases are widely recognized to be able to realize electric field control of magnetic order due to its strong strain mediated magnetoelectric ͑ME͒ coupling resulting from the inversed piezoelectric effect and piezomagnetic effect. [10][11][12][13][14][15][16][17][18][19] Several multiferroic heterostructures have been known to show large electrical field manipulation of magnetism, such as FeGaB/Si/PMN-PT ͑lead magnesium niobate-lead titanate͒, yttrium iron garnet ͑YIG͒/PMN-PT and YIG/BSTO ͑barium strontium titanate͒, 8,10,11,20,21 which show great prospects for E-field tunable magnetic devices. However, the tunable ranges of most demonstrated microwave multiferroic devices are still quite limited.…”

Section: Introductionmentioning

confidence: 99%

Electrical tuning of magnetism in Fe3O4/PZN–PT multiferroic heterostructures derived by reactive magnetron sputtering

Liu¹,

Obi²,

Cai³

et al. 2010

Journal of Applied Physics

133

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Strong magnetoelectric ͑ME͒ coupling was demonstrated in Fe 3 O 4 /PZN-PT ͑lead zinc niobate-lead titanate͒ multiferroic heterostructures obtained through a sputter deposition process. The dependence of the magnetic anisotropy on the electric field ͑E-field͒ is theoretically predicted and experimentally observed by ferromagnetic resonance spectroscopy. A large tunable in-plane magnetic anisotropy of up to 600 Oe, and tunable out-of-plane anisotropy of up to 400 Oe were observed in the Fe 3 O 4 /PZN-PT multiferroic heterostructures, corresponding to a large ME coefficient of 100 Oe cm/ kV in plane and 68 Oe cm/ kV out of plane, which match well with predicted results. In addition, the electric field manipulation of magnetic anisotropy is also demonstrated by the electric fields dependence of magnetic hysteresis loops, showing a large squareness ratio change of 44%. These Fe 3 O 4 /PZN-PT multiferroic heterostructures exhibiting large E-field tunable magnetic properties provide great opportunities for novel electrostatically tunable multiferroic devices.

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“…27 Compared to conventional tunable microwave magnetic devices that are tuned by magnetic field, these electrostatically tunable microwave multiferroic devices are much more energy efficient, less noisy, compact, and light-weight. The magneto electric effect can be realized in multiferroic composites through a strain/stress mediated interaction [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] which enables effective energy transfer between electric and magnetic fields and leads to important new functionalities and new devices. A key component for reconfigurable RF/microwave electronics is a voltage tunable inductor.…”

Section: Multiferroic Thin Film Devicesmentioning

confidence: 99%

“…97 This represents a promising new approach to build a new class of fast electric field tunable low power devices based on converse ME interactions. [24][25][26]97,98 An electric field E applied to the piezoelectric transducer produces a mechanical deformation that couples to the ferrite and produces a change in the ferromagnetic resonance field, ferromagnetic resonance frequency, or permeability. Unlike the situation when magnetic fields are used for such tuning, the voltage tuning process is fast, and power efficient as the biasing voltages involve minimal currents and are nearly passive.…”

Section: Voltage Tunable Magneto-electric Rf/microwave/millimeter Wavmentioning

confidence: 99%

“…[20][21][22][23][24][25][26] One important series of such multiferroic devices is the electrostatically tunable microwave multiferroic signal processing devices, including tunable resonators, 24 phase shifters, 25 and tunable filters. 27 Compared to conventional tunable microwave magnetic devices that are tuned by magnetic field, these electrostatically tunable microwave multiferroic devices are much more energy efficient, less noisy, compact, and light-weight.…”

Section: Multiferroic Thin Film Devicesmentioning

confidence: 99%

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Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

147

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

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Ferrite-ferroelectric hybrid wave phase shifters

Cited by 138 publications

References 11 publications

Status and Perspectives of Multiferroic Magnetoelectric Composite Materials and Applications

Status and Perspectives of Multiferroic Magnetoelectric Composite Materials and Applications

Electrical tuning of magnetism in Fe3O4/PZN–PT multiferroic heterostructures derived by reactive magnetron sputtering

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

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