Ferroelectric and pyroelectric properties of highly (110)-oriented Pb(Zr0.40Ti0.60)O3 thin films grown on Pt∕LaNiO3∕SiO2∕Si substrates

Abstract

Articles you may be interested inElectric field modulation of magnetism and electric properties in La-Ca-MnO3/Pb(Zr0.52Ti0.48)O3 magnetoelectric laminate J. Appl. Phys. 113, 17C712 (2013); 10.1063/1.4795871 Erratum: Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates [Appl. Phys. Lett.90, 232908 (2007)] Appl. Phys. Lett. 91, 069901 (2007); 10.1063/1.2767970 Structure and properties of W O 3 -doped Pb 0.97 La 0.03 ( Zr 0.52 Ti 0.48 ) O 3 ferroelectric thin films prepared by a sol-gel process J. Appl. Phys. 98, 034104 (2005); 10.1063/1.1999834 Self-biased dielectric bolometer from epitaxially grown Pb(Zr,Ti)O 3 and lanthanum-doped Pb(Zr,Ti)O 3 multilayered thin filmsPb͑Zr 0.4 Ti 0.6 ͒O 3 thin films with a thickness of 500 nm were spin coated on ͑110͒ preferred Pt bottom electrodes using a sol-gel method, in which the ͑110͒ preferred Pt bottom electrode was developed by using a ͑100͒-oriented conductive oxide electrode LaNiO 3 film as an adhesion layer on a SiO 2 /Si substrate. X-ray diffraction analysis and field emission scanning electron microscopy show that the as-grown Pb͑Zr 0.4 Ti 0.6 ͒O 3 films are highly ͑110͒-oriented with a columnar structure. It indicates that the ͑110͒ preferred Pt bottom electrode is effective for growing highly ͑110͒-oriented Pb͑Zr 0.4 Ti 0.6 ͒O 3 films. The as-grown Pb͑Zr 0.4 Ti 0.6 ͒O 3 films show excellent dielectric and ferroelectric properties with dielectric constant 33 T / 0 = 1620, loss tangent tan ␦ = 2.1%, spontaneous polarization 2P s = 158 C/cm 2 , and remnant polarization 2P r =92 C/cm 2 . Excellent pyroelectric properties are also detected in the ͑110͒-oriented films. At room temperature, the pyroelectric coefficient and the figure of merit for detectivity can reach up to 7.8ϫ 10 −4 C m −2 K −1 and 1.79 ϫ 10 −5 Pa −0.5 , respectively.

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

“…In Table I, we summarize the typical room temperature pyroelectric coefficients of polycrystalline PZT thin films on Si or metallized Si substrates for Ti-rich compositions. 13,[32][33][34][35][36][37][38][39][40][41][42][43][44][45] Specific details corresponding to the Ti composition, synthesis method, processing temperatures, film thickness, and texture are provided in this summary. Table I …”

The effect of misfit strain on the phase diagram and pyroelectric effect in (110) oriented Pb(Zr1−xTix)Qiu1, Chen2, Wang3 et al. 2016Solid State Communications11010View full textAdd to dashboardCite

“…The pyroelectric coefficient p 3 of 3 Â 10 À 4 C=m 2 K in Pb Zr 0:4 Ti 0:6 ð Þ O 3 thin film is smaller than that of the experimental measurements, e.g. p 3 ¼ 7:8 Â10 À 3 C=m 2 K and p 3 ¼ 9 Â 10 À 3 C=m 2 K for (110) oriented Pb Zr 0:4 Ti 0:6 ð Þ O 3 thin films grown on Pt=LaNiO 3 =SiO 2 =Si and Pt=LiNiO 3 =Al 2 O 3 =Si substrates respectively [14,15].…”

“…The pyroelectric coefficient of 4:8 Â 10 À 4 C=m 2 K was observed at room temperature because of the high crystalline quality of the film. However, the excellent pyroelectric coefficient of 7:8 Â 10 À 4 C=m 2 K was found in highly (110) oriented PbðZr 0:4 Ti 0:6 ÞO 3 thin films which were prepared on (110) preferred Pt bottom electrodes [14,15]. Furthermore, it is expected that the dielectric and pyroelectric coefficient can be improved in (110) oriented PbðZr 0:5 Ti 0:5 ÞO 3 thin films.…”

High energy-storage performance of 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 relaxor ferroelectric thin films prepared by RF magnetron sputtering

“…Clearly, it could be found that larger dielectric tunability was obtained for films deposited at 300 C, which was contributed to its larger dielectric constant. Generally speaking, larger dielectric constant usually led to higher tunability [19]. The e r -E curves of PMN-PT 90/ 10 thin films deposited at 300 C with different thicknesses are showed in Fig.…”

“…In this work, LaNiO 3 (LNO) film was used as the bottom electrodes due to its good metallic conductivity, and also was served as an effective surface for the preferred growth of the ferroelectric thin films [17][18][19][20]. 250-nm-thick LNO layers with (100)-preferred orientation were first deposited at 550 C on silicon substrate by RF magnetron sputtering.…”