Ferroelectric Barium-Strontium Niobate Films and Multi-Layer Structures

Kostsov, E. G.

doi:10.1080/00150190590926427

Cited by 19 publications

(15 citation statements)

References 17 publications

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“…Moreover, usually pyroelectric hysteresis loops in doped ferroelectrics have a typical "slim" shape with coercive field values much lower than the thermodynamic one [14,15]. The quantitative comparison of our results with typical PZT-pyroelectric loops is presented in the next section.…”

Section: 2))mentioning

confidence: 98%

“…In this case ferroelectric and pyroelectric hysteresis loops have got relatively high γ and D remnant values, but reveal low coercive fields [3]. Usually pyroelectric hysteresis loops of PZT are rather slim and sloped even at low frequencies ω ∼ (0.1 ÷ 10)Hz [3], no pyroelectric coefficient maximum near the coercive field is observed [14][15][16].…”

Section: Discussionmentioning

confidence: 99%

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Pyroelectric response of inhomogeneous ferroelectric-semiconductor films

Morozovska¹

2007

Condens. Matter Phys.

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We have modified Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described by using six coupled equations for the average displacement, its mean-square fluctuation and correlation with charge defects density fluctuations, average pyroelectric coefficient, its fluctuation and correlation with density fluctuations of charged defects.Coupled equations demonstrate the inhomogeneous reversal of pyroelectric response in contrast to the equations of Landau-Khalatnikov type, which describe the homogeneous reversal with sharp pyroelectric coefficient peaks near the thermodynamic coercive field values. Our approach explains pyroelectric loops observed in Pb(Zr,Ti)O 3 film.

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Section: 2))mentioning

confidence: 98%

Section: Discussionmentioning

confidence: 99%

Pyroelectric response of inhomogeneous ferroelectric-semiconductor films

Morozovska¹

2007

Condens. Matter Phys.

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“…In these materials low frequency dielectric hysteresis loops were obtained from the measurements of the capacity dependence on the applied voltage. 13,14 Nowadays such typical ferroelectric semiconductors such as BaTiO 3 ceramics, disordered and relaxor SBN-x, PbZr x Ti 1−x O 3 ͓PZT͑x /1−x͔͒ solid solutions slightly doped with Fe, Cr or La, Nb, Nd, Ce, etc., their films, multilayers, and heterostructures are widely used in sensors, actuators, electro-optic, piezoelectric, and pyroelectric devices, and memory elements. 13 Pyroelectric loops usually are sloped and slim; no maxima of pyroelectric response near the coercive field are observed.…”

Section: Theoretical Description Of Ferroelectric and Pyroelectric Hymentioning

confidence: 99%

“…13,14 Though simplifications and approximations have been made ͑e.g., Refs. Moreover, usually pyroelectric hysteresis loops in doped ferroelectrics have typical "slim" shape with coercive field values much lower than the thermodynamic one.…”

Section: B Coupled Equations For Average Quantitiesmentioning

confidence: 99%

Theoretical description of ferroelectric and pyroelectric hystereses in the disordered ferroelectric-semiconductor films

Morozovska

Eliseev

Rémiens

et al. 2006

Journal of Applied Physics

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Model for ferroelectric semiconductors thin films accounting for the space varying permittivity J. Appl. Phys. 97, 024104 (2005); 10.1063/1.1834728 Improved ferroelectric and pyroelectric properties in Mn-doped lead zirconate titanate thin films J. Appl. Phys. 94, 5228 (2003); 10.1063/1.1613370 Competition between ferroelectric and semiconductor properties in Pb ( Zr 0.65 Ti 0.35 ) O 3 thin films deposited by sol-gel J. Appl. Phys. 93, 4776 (2003); 10.1063/1.1562009Ferroelectric polarization in stretched piezo-and pyroelectric poly(vinylidene fluoride-hexafluoropropylene) copolymer filmsWe have modified the Landau-Khalatnikov approach and shown that both the polar lattice and the screened charged defects determine the response of disordered ferroelectric semiconductors. This system exhibits the spatially inhomogeneous switching under the external field while the Landau-Khalatnikov model describes homogeneous switching with the sharp pyroelectric coefficient peak near the thermodynamic coercive field value. Our model gives more realistic pyroelectric hysteresis loop shape without any peaks near the coercive field and describes both qualitatively and quantitatively typical Pb͑Zr, Ti͒O 3 and ͑Sr, Ba͒Nb 2 O 6 films pyroelectric hysteresis loops.

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“…The thicknesses of the ITO and SBN films were 0.1-0.5 and 0.3-3 μm, respectively. The preparation technique of the films and their main electrical characteristics were described in (Kostsov, 2005). During the electrostatic attraction of the petal to the ferroelectric surface the total current consisting of the conductive current and the capacitance current arises in the electric circuit.…”

Section: "Electrostatic Glue"mentioning

confidence: 99%