2001
DOI: 10.1143/jjap.40.5564
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Ferroelectric Bi4Ti3O12 Films on Si(100) with An Ultrathin Buffer Layer of Silicon Oxynitride: A Comparative Study Using X-Ray Photoelectron Spectroscopy

Abstract: Using pulsed-laser deposition, ferroelectric Bi4Ti3O12 (BiT) films were grown on Si(100) with and without an ultrathin buffer layer of silicon oxynitride (SiON), and the interface states were investigated using X-ray photoelectron spectroscopy. For both as-grown specimens, the additional oxidation of the interface Si was observed, and their thicknesses were almost identical. Due to the postannealing at 700°C in an oxygen ambient, on the other hand, a large difference in the Si oxidation was observed between th… Show more

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Cited by 2 publications
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