Ferroelectric Domain Breakdown

Molotskii, M.; Agronin, A.; Urenski, P.; Shvebelman, M.; Rosenman, G.; Rosenwaks, Y.

doi:10.1103/physrevlett.90.107601

Cited by 152 publications

(111 citation statements)

References 17 publications

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“…Such "threshold" domain formation is similar to the well-known first order phase transition and correlates with recent experimental [2], [3] and theoretical [16], [22], [23] results.…”

Section: Resultssupporting

confidence: 66%

“…In the majority of experiments [1], [2], [22] reversed spike-like domains remain their initial shape and sizes during many days and weeks. This fact is extremely useful for the applications and has the following explanation within the framework of the proposed model.…”

Section: Discussionmentioning

confidence: 99%

“…Now let us apply our theoretical results to the micro-domain formation in LiNbO 3 single crystals using high-voltage AFM. In experiments [1], [22] …”

Section: U >>mentioning

confidence: 99%

“…is the intrinsic electrostatic energy of the system "polarized domain butt-charged tip apex ", omitted in [7], [21], [22]. It is obvious that in the case of strong indentation limit when the tip is in the mechanical contact with ferroelectric surface and the domain size is limited by the tip sample contact area [21], one can neglect the term Φ , because…”

mentioning

confidence: 99%

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Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Morozovska

Eliseev

2006

Phys. Rev. B

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We calculate the realistic sizes of nano-domains recorded by the electric field of atomic force microscope tip in BaTiO 3 and LiNbO 3 ferroelectric-semiconductors in contrast to the over-estimated ones obtained in the previous works. We modified the existing models of domain formation allowing for the Debye screening, recharging of sluggish surface screening layers caused by emission current between the tip apex and the domain butt surface and the redistribution of domain depolarization field induced by the charged tip apex. We have shown that the depolarization field energy of the domain butt, Debye screening effects and field emission at high voltages lead to the essential decrease of the equilibrium domain sizes. We obtained, that the domain length and radius do not decrease continuously with voltage decrease: the domain appears with non-zero length and radius at definite critical voltage. Such "threshold" domain formation is similar to the first order phase transition and correlates with recent theoretical and experimental investigations.

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“…Such "threshold" domain formation is similar to the well-known first order phase transition and correlates with recent experimental [2], [3] and theoretical [16], [22], [23] results.…”

Section: Resultssupporting

confidence: 66%

Section: Discussionmentioning

confidence: 99%

“…Now let us apply our theoretical results to the micro-domain formation in LiNbO 3 single crystals using high-voltage AFM. In experiments [1], [22] …”

Section: U >>mentioning

confidence: 99%

mentioning

confidence: 99%

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Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Morozovska

Eliseev

2006

Phys. Rev. B

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“…1 This interest arises mainly from the potential application of nanodomain superlattices for a generation of electronic and photonic devices. Experiments show that evolution of domains tailored in thin films [2][3][4][5] and bulk ferroelectrics [6][7][8][9][10][11] by the use of AFM is very different. Application of a high bias of more than kilovolt to the tip led to the observation of the so-called "domain breakdown" in bulk ferroelectric crystals.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of ferroelectric domain growth in the field of atomic force microscope

Agronin

Molotskii

Rosenwaks

et al. 2006

Journal of Applied Physics

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Agronin, A.; Molotskii, M.; Rosenwaks, Y.; Rosenman, G.; Rodriguez, B. J.; Kingon, A. I.; and Gruverman, Alexei, "Dynamics of ferroelectric domain growth in the field of atomic force microscope" (2006 Application of very high voltage to atomic force microscope tip leads to the growth of narrow, stringlike domains in some ferroelectrics, a phenomenon that was named "ferroelectric domain breakdown." In this work the dynamics of domain breakdown have been studied experimentally and theoretically in stoichiometric lithium niobate ͑LN͒. The theory has been found to be in a good agreement with the measured domain radius temporal dependence. Dynamics of domain growth has also been studied in ultrathin LN crystals, where the domain breakdown phenomenon does not take place. It is also shown that domain formation processes occurring in bulk and ultrathin crystals are very different, and this is ascribed to the observed difference in depolarization energy dependence on the domain length.

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Sub‐Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

Jiang

Lee

Hwang

et al. 2011

Adv Funct Materials

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After calculations of various domain‐switching current transients under the pulse from electrical circuit parameters, the field dependence of domain‐switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4–280 K from the height of domain‐switching current in Pb(Zr0.4Ti0.6)O3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev. 1954, 95, 690] and an ultimate domain‐switching current density of 1.4 × 108 A cm−1 is extracted at the highest field of 0.20 MV cm−1. From classical domain‐nucleation models with thermal fluctuations, an ultimate (asymptotic high‐field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink‐nucleation‐rate limited.

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Ferroelectric Domain Breakdown

Cited by 152 publications

References 17 publications

Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Dynamics of ferroelectric domain growth in the field of atomic force microscope

Sub‐Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

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