Ferroelectric Domain Wall Injection

Whyte, J.; McQuaid, R. G. P.; Sharma, Pankaj; Canalias, Carlota; Scott, J. F.; Gruverman, Alexei; Gregg, J. M.

doi:10.1002/adma.201303567

Cited by 77 publications

(65 citation statements)

References 45 publications

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“…Exotic domain-wall phenomena are observed in archetypal ferroelectrics, such as BaTiO 3 (refs 12,13), PbZr 0.2 Ti 0.8 O 3 (refs 7,14,15) and LiNbO 3 (ref. 16), where metastable charged domain walls can be induced by, for example, electric fields 17 . Additional degrees of freedom arise in so-called improper ferroelectrics, where the polarization emerges due to the coupling to a primary structural or magnetic order parameter.…”

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confidence: 99%

Polarization control at spin-driven ferroelectric domain walls

et al. 2015

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Unusual electronic states arise at ferroelectric domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain domain walls in proper ferroics are lifted. Here we show that spin-driven ferroelectricity promotes the emergence of charged domain walls. This provides new degrees of flexibility for controlling domain-wall charges in a deterministic and reversible process. We create and position a domain wall by an electric field in Mn 0.95 Co 0.05 WO 4 . With a magnetic field we then rotate the polarization and convert neutral into charged domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.

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confidence: 99%

Polarization control at spin-driven ferroelectric domain walls

et al. 2015

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“…It has recently become evident that ferroelectric domain walls can possess diverse functional characteristics that are completely different from the domains that they delineate: they can be conducting 2 , or even superconducting 3 , when the domains themselves are insulating. Moreover, they can be moved, injected and annihilated by external electric fields 4 , so that their potential use in 'active' two-dimensional electronic devices is overwhelmingly clear. Hong and colleagues' imaging technique rapidly locates ferroelectric domain walls and could therefore be invaluable in supporting the quest for "domain wall nanoelectronics" 5 .…”

Section: J Marty Gregg and Amit Kumarmentioning

confidence: 99%

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Gregg

Kumar

2014

Nature

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“…33. A platinized MgO substrate was used to create co-planar electrodes by FIB milling, leaving a $2 lm wide interelectrode gap.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…In previous work, Whyte et al 33 demonstrated that lowpermittivity air holes, milled into a ferroelectric of higher permittivity, could create local regions of both field enhancement and denudation. Regions of field enhancement were previously found to act as nucleation sites during switching, while low field regions could cause domain wall pinning.…”

Section: B Controlled Domain Wall Injection Using Milled Holes In Ktmentioning

confidence: 99%

“…Building upon the domain nucleation control already demonstrated, 33 the influence of the hole shape on the relative intensity of localized field hot-spots was investigated further using FEA modeling (note that in this set of experiments simple planar electrodes are used, i.e., no patterned asperities in electrode profile). The shape of an ellipse and triangle, for example, appear to yield quite different levels of field enhancements, shown pictorially in the Quickfield models in Fig.…”

Section: B Controlled Domain Wall Injection Using Milled Holes In Ktmentioning

confidence: 99%

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Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Whyte

McQuaid

Ashcroft

et al. 2014

Journal of Applied Physics

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Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO4 (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

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Ferroelectric Domain Wall Injection

Cited by 77 publications

References 45 publications

Polarization control at spin-driven ferroelectric domain walls

Polarization control at spin-driven ferroelectric domain walls

Trawling for complements

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

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