2019
DOI: 10.1021/acs.nanolett.9b02991
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Ferroelectric Domain Walls in PbTiO3 Are Effective Regulators of Heat Flow at Room Temperature

Abstract: Achieving efficient spatial modulation of phonon transmission is an essential step on the path to phononic circuits using "phonon currents". With their intrinsic and reconfigurable interfaces, domain walls (DWs), ferroelectrics are alluring candidates to be harnessed as dynamic heat modulators. This paper reports the thermal conductivity of single-crystal PbTiO 3 thin films over a wide variety of epitaxial-strain-engineered ferroelectric domain configurations. The phonon transport is proved to be strongly affe… Show more

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Cited by 58 publications
(77 citation statements)
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“…The strain fields associated with ferroelastic DWs in BiFeO 3 , Pb(Zr 0.3 Ti 0.7 )O 3 , and PbTiO 3 [12,13,15] impose a very large thermal resistance, resulting in an important reduction of the thermal conductivity of these FE materials. Our measurements cannot discriminate between the effect of the contribution of different types of DWs, i.e., purely ferroelectric 180 • and ferroelastic 90 • .…”
Section: Resultsmentioning
confidence: 99%
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“…The strain fields associated with ferroelastic DWs in BiFeO 3 , Pb(Zr 0.3 Ti 0.7 )O 3 , and PbTiO 3 [12,13,15] impose a very large thermal resistance, resulting in an important reduction of the thermal conductivity of these FE materials. Our measurements cannot discriminate between the effect of the contribution of different types of DWs, i.e., purely ferroelectric 180 • and ferroelastic 90 • .…”
Section: Resultsmentioning
confidence: 99%
“…As κ 0 we have used the experimental thermal conductivity of STO on LSAT. Using a value of R ≈ 5 × 10 −9 K m 2 W −1 , the thermal boundary resistance reported for a DW in BiFeO 3 and PbTiO 3 [13,15], the average distance φ can be calculated ( Fig. 4).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Finally, we also investigate a PbTiO 3 thin film of 50 nm thickness epitaxially grown by reactive molecular beam epitaxy on a single-crystal SrTiO 3 substrate (the growth details can be found elsewhere [20]). Because of the large compressive stress exerted by the substrate (−1.36%), only domains with vertical (out-of-plane) polarization are allowed in the ferroelectric film [20]. After electrically polarizing two different areas of the film with a dc voltage of 5 V, we pole domains of opposite sign, as indicated by the corresponding PFM phase contrast [ Fig.…”
Section: Samples and Domain Structurementioning
confidence: 99%
“…Even purely ferroelectric (i.e., nonferroelastic) domain walls also react to strain gradients introduced by external indentation [18] or by the proximity of another ferroelectric (nonferroelastic) domain wall [19]. Moreover, elastic contrast between domains and domain walls may affect the propagation and scattering of phonons-and, consequently, also the propagation of heat [20][21][22]. Also, if there is mechanical contrast in 180°domain walls, it may be used as an alternative way to mechanically read ferroelectric bits [23].…”
Section: Introductionmentioning
confidence: 99%